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首页> 外文期刊>Nanotechnology >Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires
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Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

机译：缺陷诱导的结构不均匀性，紫外线发光和近带边缘光致发光扩大在退化的IN2O3纳米线中

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摘要

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (V-O) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.
机译：我们展示了缺陷诱导氧化铟（In2O3）纳米线的形态和表面性质的变化，进一步研究它们对近带边缘（NBE）发射的影响，从而显示表面状态对基于IN2O3纳米结构的装置特性的显着影响用于潜在的光电应用。通过使用金催化剂辅助气相 - 固体方法通过碳热还原技术合成具有立方晶体结构（C-IN2O3）的In2O3纳米线。由于使用拉曼光谱证实的氧空位（V-O）缺陷，可以在大于3.5eV的能量上观察到强光学吸收的发病能量，其能量大于3.5 eV。高分辨率透射电子显微镜，X射线光电子体光谱和价带分析对纳米线形态和化学计量的组合揭示了纳米线表面上的高密度VO缺陷。结果，可以观察到化学吸附的氧物质，导致在表面处弯曲的向上带弯曲，其对应于2.15eV的较小价带偏移。温度依赖性光致发光（PL）光谱用于研究缺陷状态的性质，并且已经讨论了表面状态对电子频带结构和NBE发射的影响。我们的数据揭示了与杂质频带扩展一致的NBE PL峰值的显着扩展，导致来自重掺杂的带尾效应。

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