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首页> 外文期刊>Nanotechnology >Synaptic behaviors of thin-film transistor with a Pt/HfOx/n-type indium-gallium-zinc oxide gate stack
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Synaptic behaviors of thin-film transistor with a Pt/HfOx/n-type indium-gallium-zinc oxide gate stack

机译：具有Pt / HFOX / n型铟镓 - 氧化锌栅极堆叠的薄膜晶体管的突触行为

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摘要

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfOx/n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (10(4)). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfOx/n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfOx gate insulator and the IGZO channel layer.
机译：我们在薄膜晶体管（TFT）中报告了各种突触行为，其中金属氧化物半导体栅极堆叠具有Pt / hfox / n型铟 - 镓 - 氧化锌（n-IgZo）结构。三末端突触TFT在重复施加栅极和排水电压时表现出可调谐的突触重量，漏极电流调制。突触重量调制是模拟，电压极性取决于可逆的，并且具有强大的数量级（＆ 10（4））的动态范围。该调制过程仿真生物突触电压，凹陷，兴奋性突触电流，配对脉冲便利化，并且由于关于脉冲幅度，宽度，重复编号和重复脉冲而导致的短期存储器转换行为。脉冲之间的间隔。这些突触行为基于PT / HFOX / N-IGZO栅极堆叠，信道移动性和由施加的栅极电压再分布而导致的氧离子的阈值电压的变化来解释。这些结果表明了使用由HFOX栅极绝缘体和IGZO通道层组成的栅极堆叠的三端突触晶体管该结构的潜力。

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