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首页> 外文期刊>Nanotechnology >Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes of Au/NiO/ZnO with a NiO interlayer prepared by radio-frequency magnetron sputtering
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Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes of Au/NiO/ZnO with a NiO interlayer prepared by radio-frequency magnetron sputtering

机译：用射频磁控溅射制备的NiO intermayer镍扩散和氧行为对Au / NiO / ZnO的异质结二极管的影响

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摘要

The rectifying characteristic of Au/ZnO Schottky diodes (SDs) was remarkably improved by introducing a NiO layer in-between the Au and ZnO layers. Compared with the Au/ZnO SDs, the introduction of the NiO layer significantly enhanced the rectification ratio from 1.38 to 1300, and reduced the ideality factor from 5.78 to 2.14. The NiO and ZnO layers were deposited on an indium-tin-oxide/glass substrate by radio-frequency magnetron sputtering. Secondary ion mass spectroscopy showed that Ni atoms diffused from NiO to ZnO, leading to a graded distribution of Ni in ZnO. X-ray diffraction demonstrated that the diffusion of Ni atoms increased the grain size and electron concentration of ZnO. X-ray photoelectron spectroscopy showed that the interstitial oxygen (O-i) atoms in NiO and ZnO compensated the oxygen vacancies (O-v) at the NiO/ZnO interface; the amount of O-v was significantly reduced, while O-i vanished at the interface. The band diagram revealed a potential drop in the bulk ZnO, owing to the graded distribution of Ni in ZnO, which accelerated the carriers, collected by the outer circuit. The carriers at the NiO/ZnO interface easily crossed over the barrier height, instead of being recombined by O-v, owing to the lower amount of O-v at the interface.
机译：通过在AU和ZnO层之间引入NiO层，通过在AU和ZnO层之间引入NiO层来显着改善Au / ZnO肖特基二极管（SDS）的整流特性。与AU / ZnO SDS相比，NIO层的引入显着提高了1.38至1300至1300的整流比，并将理想因子从5.78降至2.14。通过射频磁控溅射将NIO和ZnO层沉积在氧化铟锡/玻璃基板上。二次离子质谱表明，从扩散的NiO与ZnO Ni原子，导致Ni的氧化锌的渐变分布。 X射线衍射表明Ni原子的扩散增加了ZnO的晶粒尺寸和电子浓度。 X射线光电子能谱显示NIO和ZnO中的间质氧（O-I）原子补偿了NiO / ZnO界面的氧空位（O-V）; O-V的量显着降低，而O-I在界面中消失。带图揭示了散装ZnO中的潜在下降，由于ZnO中Ni的分布，其加速由外部电路收集的载体。在NIO / ZnO界面处的载流子容易横跨屏障高度，而不是通过O-V来重新组合，由于界面处的较低的O-V。

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