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首页> 外文期刊>Nanotechnology >Direct nucleation, morphology and compositional tuning of InAs1-xSbx nanowires on InAs (111) B substrates
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Direct nucleation, morphology and compositional tuning of InAs1-xSbx nanowires on InAs (111) B substrates

机译：INAS1-XSBX纳米线上的直接成核，形态和组成调谐（111）B基板

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摘要

III-V ternary nanowires are interesting due to the possibility of modulating their physical and material properties by tuning their material composition. Amongst them InAs1-xSbx nanowires are good candidates for applications such as Infrared detectors. However, this material has not been grown directly from substrates, in a large range of material compositions. Since the properties of ternaries are alterable by tuning their composition, it is beneficial to gain access to a wide range of composition tunability. Here we demonstrate direct nucleation and growth of InAs1-xSbx nanowires from Au seed particles over a broad range of compositions (x = 0.08-0.75) for different diameters and surface densities by means of metalorganic vapor phase epitaxy. We investigate how the nucleation, morphology, solid phase Sb content, and growth rate of these nanowires depend on the particle dimensions, and on growth conditions such as the vapor phase composition, V/III ratio, and temperature. We show that the solid phase Sb content of the nanowires remains invariant towards changes of the In precursor flow. We also discuss that at relatively high In flows the growth mechanism alters from Au-seeded to what is referred to as semi In-seeded growth. This change enables growth of nanowires with a high solid phase Sb content of 0.75 that are not feasible via Au-seeded growth. Independent of the growth conditions and morphology, we report that the nanowire Sb content changes over their length, from lower Sb contents at the base, increasing to higher amounts towards the tip. We correlate the axial Sb content variations to the axial growth rate measured in situ. We also report spontaneous core-shell formation for Au-seeded nanowires, where the core is Sb-rich in comparison to the Sb-poor shell.
机译：III-V三元纳米线是有趣的，因为可以通过调节其材料组成来调节其物理和材料性质。其中INAS1-XSBX纳米线是红外探测器等应用的良好候选者。然而，这种材料尚未直接从基材上生长，在大量的材料组合物中。由于Ternaries的特性通过调整它们的组成来改变，因此可以获得广泛的组成可调性是有益的。在这里，我们通过熔化的直径和表面密度来证明来自Au种子颗粒的InAs1-XSBx纳米线的直接成核和生长来自Au种子颗粒，通过熔化的气相外延，不同的直径和表面密度。我们研究了这些纳米线的成核，形态，固相Sb含量和生长速率取决于颗粒尺寸，以及诸如气相组合物，V / III比和温度的生长条件。我们表明纳米线的固相Sb含量仍然不变朝向前体流动的变化。我们还讨论，在相对较高的流动中，生长机制从Au-Shifed转移到被称为半种质生长的内容。该变化使纳米线的生长能够通过α种植的生长而不可行的0.75的高固相Sb含量。与生长条件和形态无关，我们报告说，纳米线SB含量从其长度变化，从底座的下部Sb内容物增加到朝向尖端的较高量。我们将轴向Sb含量变化与原位测量测量的轴向生长速率相关联。我们还报告了用于Au播种的纳米线的自发核心壳形成，其中核心与SB可怜的壳相比富含SB。

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