GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

Yu Feng; Yao Shengbo; Roemer Friedhard; Witzigmann Bernd; Schimpke Tilman; Strassburg Martin; Bakin Andrey; Schumacher Hans Werner; Peiner Erwin; Wasisto Hutomo Suryo; Waag Andreas

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GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

机译：GaN纳米线阵列与非极侧壁用于垂直集成的场效应晶体管

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Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i. e., with an activation energy of 0.69 +/- 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of > 10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

机译：由于它们在光电子和纳米电子领域的新装置的可能性，垂直对齐的氮化镓（GaN）纳米线（NW）阵列引起了很多关注。在这项工作中，通过组合包括干燥和湿法蚀刻的合适的纳米机械加工来设计和制造GaN NW阵列。在电感耦合等离子体干反应离子蚀刻后，随后使用AZ400K显影剂（即，0.69 +/- 0.02eV和CR掩模的激活能）以湿化学蚀刻处理GaN NW以形成六边形和平滑的A平面侧壁的湿化学蚀刻。使用氢氧化钾（KOH）水溶液的蚀刻实验表明侧壁取向偏好取决于蚀刻剂浓度。已经提出了一种关于晶体谱面刻面的表面粘合配置的模型，以了解各向异性湿法蚀刻机构。最后，已经制造了基于NW阵列的垂直场效应晶体管，并制造了具有包装器结构的垂直场效应晶体管。由99个NWS组成的设备表现出具有1.5V的阈值电压的增强模式操作，优异的静电控制和> 10mA的高电流输出，其在下一代电源开关和高温数字电路中占上潜在的应用。

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来源
《Nanotechnology》 |2017年第9期|共9页
作者
Yu Feng; Yao Shengbo; Roemer Friedhard; Witzigmann Bernd; Schimpke Tilman; Strassburg Martin; Bakin Andrey; Schumacher Hans Werner; Peiner Erwin; Wasisto Hutomo Suryo; Waag Andreas;
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作者单位

Tech Univ Carolo Wilhelmina Braunschweig Inst Halbleitertech IHT Hans Sommer Str 66 D-38106 Braunschweig Germany;

Tech Univ Carolo Wilhelmina Braunschweig Inst Halbleitertech IHT Hans Sommer Str 66 D-38106 Braunschweig Germany;

Univ Kassel Computat Elect &

Photon Wilhelmshoher Allee 71 D-34121 Kassel Germany;

Univ Kassel Computat Elect &

Photon Wilhelmshoher Allee 71 D-34121 Kassel Germany;

OSRAM Opto Semicond GmbH Leibnizstr 4 D-93055 Regensburg Germany;

OSRAM Opto Semicond GmbH Leibnizstr 4 D-93055 Regensburg Germany;

Tech Univ Carolo Wilhelmina Braunschweig Inst Halbleitertech IHT Hans Sommer Str 66 D-38106 Braunschweig Germany;

Phys Tech Bundesanstalt Bundesallee 100 D-38116 Braunschweig Germany;

Tech Univ Carolo Wilhelmina Braunschweig Inst Halbleitertech IHT Hans Sommer Str 66 D-38106 Braunschweig Germany;

Tech Univ Carolo Wilhelmina Braunschweig Inst Halbleitertech IHT Hans Sommer Str 66 D-38106 Braunschweig Germany;

Tech Univ Carolo Wilhelmina Braunschweig Inst Halbleitertech IHT Hans Sommer Str 66 D-38106 Braunschweig Germany;

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正文语种 eng
中图分类特种结构材料;
关键词
GaN nanowire array; wet etching; nonpolar plane; vertical field effect transistors;

机译：GaN纳米线阵列;湿法蚀刻;非极化平面;垂直场效应晶体管;

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专利

1. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors [J] . Yu Feng, Yao Shengbo, Roemer Friedhard, Nanotechnology . 2017,第9期

机译：GaN纳米线阵列与非极侧壁用于垂直集成的场效应晶体管
2. Electrical properties of GaN metal-insulator- semiconductor field-effect transistors with Al_2O_3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces [J] . Yuto Ando, Kentaro Nagamatsu, Manato Deki, Applied Physics Letters . 2020,第24期

机译：GaN金属 - 绝缘体 - 半导体场效应晶体管的电气特性，具有在邻近GA-极性和非极性表面上形成的AL_2O_3 / GaN界面
3. Nonpolar a-Plane AIGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate [J] . Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Annales de l'I.H.P . 2011,第6期

机译：独立式GaN衬底上生长的非极性a平面AIGaN / GaN异质结构场效应晶体管
4. Silicon nanowire ion-sensitive field-effect transistor array integrated with a CMOS-based readout chip [C] . Livi P., Wipf M., Tarasov A., International Conference on Solid-State Sensors, Actuators and Microsystems . 2013

机译：集成了基于CMOS的读出芯片的硅纳米线离子敏感场效应晶体管阵列
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors [O] . Jun-Sik Yoon, Kihyun Kim, Chang-Ki Baek -1

机译：核-壳同质结硅垂直纳米线隧穿场效应晶体管
7. Hybrid Electrothermal Simulation of a Three-Dimensional Fin-Shaped Field-Effect Transistor Based on GaN Nanowires [O] . Hao, Qing, Zhao, Hongbo, Xiao, Yue, 2017

机译：三维翅片形状的混合电热模拟基于GaN纳米线的场效应晶体管
8. GaN Power Electronics: From GaN-on-Si Lateral Transistor to GaN-on-GaN Vertical Transistor and GaN CMOS IC. [R] . Chu, R., Cao, Y., Li, R., 2017

机译：GaN功率电子器件：从GaN-on-si横向晶体管到GaN-on-GaN垂直晶体管和GaN CmOs IC。

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

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