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Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode

机译：基于Al掺杂ZnO电极的倒置结构量子点发光二极管

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摘要

As an indium-free transparent conducting film, Al-doped zinc oxide (AZO) was prepared by magnetron sputtering technique, exhibiting good electrical, optical and surface characteristics. UPS/XPS measurements show that AZO and zinc oxide nanoparticles (ZnO NPs) have matched energy level that can facilitate the electron injection from AZO to ZnO NPs. Inverted structural green quantum dot light-emitting diodes based on AZO cathode were fabricated, which exhibits a maximum luminance up to 178 000 cd m(-2), and a maximum current efficiency of 10.1 cd A(-1). Therewith, combined with the simulated space-charge-limited current (SCLC) theory, the measured current density-voltage characteristics of charge-only devices were analyzed. It demonstrated that AZO and ZnO NPs had much better electron injection efficiency than ITO, showing a electron injection efficiency close to 100%. By studying the relationship between the electric field and the current density, the measured curve of AZO-based devices nearly fits the theoretical curve of SCLC and the AZO electrode has a better ohmic contact with ZnO NPs than ITO.
机译：作为无铟透明导电膜，通过磁控溅射技术制备Al掺杂的氧化锌（AZO），表现出良好的电气，光学和表面特性。 UPS / XPS测量表明，偶氮和氧化锌纳米颗粒（ZnO NPS）具有匹配的能级，其可以促进从偶氮到ZnO NPS的电子注入。制造基于AZO阴极的倒置结构绿色量子点发光二极管，其显示出高达178000cd m（-2）的最大亮度，以及10.1cd A（-1）的最大电流效率。因此，与模拟空间电荷限制电流（SCLC）理论相结合，分析了仅电荷器件的电流密度 - 电压特性。它表明，AZO和ZnO NPS比ITO更好的电子注入效率，显示了接近100％的电子注入效率。通过研究电场和电流密度之间的关系，基于偶氮的器件的测量曲线几乎符合SCLC的理论曲线，偶氮电极与Zno NPS比ITO更好地接触。

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  • 来源
    《Nanotechnology》 |2017年第36期|共8页
  • 作者

    Tang Zhaobing; Lin Jie; Wang Lishuang; Luo Jinsong; Zhao Jialong; Li Haibo; Wang Yunjun; Liu Xingyuan;

  • 作者单位

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Jilin Peoples R China;

    Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

    Chem Siping 136000 Peoples R China;

    Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

    Chem Siping 136000 Peoples R China;

    Suzhou Xingshuo Nanotech Co Ltd Suzhou 215123 Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Changchun 130033 Jilin Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    AZO; quantum dots; QLEDs; SCLC; space-charge-limited current;

    机译：偶氮;量子点;QLEDS;SCLC;空间充电限制电流;

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