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Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperatures

机译：低温热氧化镓纳米粒子的可调谐等离子体共振

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摘要

The effect of the oxidation of gallium nanoparticles (Ga NPs) on their plasmonic properties is investigated. Discrete dipole approximation has been used to study the wavelength of the out-of-plane localized surface plasmon resonance in hemispherical Ga NPs, deposited on silicon substrates, with oxide shell (Ga2O3) of different thickness. Thermal oxidation treatments, varying temperature and time, were carried out in order to increase experimentally the Ga2O3 shell thickness in the NPs. The optical, structural and chemical properties of the oxidized NPs have been studied by spectroscopic ellipsometry, scanning electron microscopy, grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. A clear redshift of the peak wavelength is observed, barely affecting the intensity of the plasmon resonance. A controllable increase of the Ga2O3 thickness as a consequence of the thermal annealing is achieved. In addition, simulations together with ellipsometry results have been used to determine the oxidation rate, whose kinetics is governed by a logarithmic dependence. These results support the tunable properties of the plasmon resonance wavelength in Ga NPs by thermal oxidation at low temperatures without significant reduction of the plasmon resonance intensity.
机译：研究了氧化镓纳米颗粒（Ga NPS）对其等离子体性能的影响。离散的偶极近似已经用于研究沉积在硅基板上的半球形GA NP中的平面外局部等离子体共振的波长，其具有不同厚度的氧化物壳（Ga2O3）。进行热氧化处理，改变温度和时间，以便在实验上增加NPS中的Ga2O3壳体厚度。已经通过光谱椭圆形测定法，扫描电子显微镜，放牧入射X射线衍射和X射线光电子谱学研究了氧化NP的光学，结构和化学性质。观察到峰值波长的清晰红移，几乎没有影响等离子体共振的强度。实现了由于热退火而导致Ga2O3厚度的可控增加。此外，仿真与椭圆测定结果一起用于确定氧化率，其动力学受对数依赖的管辖。这些结果通过在低温下热氧化在不显着降低等离子体共振强度的情况下，支持GA NPS在Ga NPS中的等离子体共振波长的可调性能。

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