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Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application

机译:用于相变存储器应用的多级存储和超高速的超晶格GE50 / GE8SB92薄膜

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摘要

Superlattice-like Ge50Te50/Ge8Sb92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phasechange memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multilevel switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.
机译:系统地研究了超晶格的GE50Te50 / GE8SB92(SLL GT / GS)薄膜,用于多级存储和超快速切换相变存储器应用。原位电阻测量表明SLL GT / GS薄膜具有升高温度的两个不同的电阻步骤。用基辛格和Arhenius图评估非晶态和中间状态的热稳定性。相位结构的进化显示,无定形SLL GT / GS薄膜首先结晶到菱形SB阶段,然后是菱形凝血酶。通过使用透射电子显微镜确认SLL GT / GS薄膜的微观结构,层状结构和界面稳定性。通过PICOSECOND激光泵探针系统测量结晶和非晶化的过渡速度。结晶过程中的体积变化是从X射线反射率获得的。制造基于SLL GT / GS薄膜的PHASeChange内存(PCM)单元以验证在电脉冲下的多级切换,短至30ns。这些结果说明了SLL GT / GS薄膜在高密度和高速PCM应用中具有很大的潜力。

著录项

  • 来源
    《Nanotechnology》 |2017年第40期|共7页
  • 作者单位

    Tongji Univ Sch Mat Sci &

    Engn Shanghai Key Lab R&

    D &

    Applicat Metall Funct Mat Shanghai 201804 Peoples R China;

    Tongji Univ Sch Mat Sci &

    Engn Shanghai Key Lab R&

    D &

    Applicat Metall Funct Mat Shanghai 201804 Peoples R China;

    Tongji Univ Sch Mat Sci &

    Engn Shanghai Key Lab R&

    D &

    Applicat Metall Funct Mat Shanghai 201804 Peoples R China;

    Sun Yat Sen Univ Dept Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Dept Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    multi-level; superlattice-like; phase-change thin film; high density; high speed;

    机译:多级;超晶格;相变薄膜;高密度;高速;

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