Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy

Halder Nripendra N.; Kelrich Alexander; Cohen Shimon; Ritter Dan

首页> 外文期刊>Nanotechnology >Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy

【24h】

Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy

机译：通过选择性区域蒸汽液体固体外延在锌混合间隙基板中生长纯紫立茨间隙纳米线

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.

机译：我们通过在选择性区域蒸汽 - 固体 - 固体（SA-VLS）方法之后，通过金属有机分子束外延报告单相紫立岩（WZ）间隙纳米线（NWS）的生长。在SA-VLS过程中，前体直接向NW侧壁供应，并且镓（或其前体）的短扩散长度不会显着限制轴向生长。透射电子显微镜（TEM）图像显示，没有沿600nm长的NW存在堆叠故障。从TEM图像获得的纯WZ间隙的晶格常数同意先前通过来自非纯NW集合的X射线衍射确定的值。

著录项

来源
《Nanotechnology》 |2017年第46期|共6页
作者
Halder Nripendra N.; Kelrich Alexander; Cohen Shimon; Ritter Dan;
展开▼
作者单位

Technion Israel Inst Technol Elect Engn Fac IL-32000 Haifa Israel;

Technion Israel Inst Technol Elect Engn Fac IL-32000 Haifa Israel;

Technion Israel Inst Technol Elect Engn Fac IL-32000 Haifa Israel;

Technion Israel Inst Technol Elect Engn Fac IL-32000 Haifa Israel;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
metalorganic molecular beam epitaxy; selective epitaxy; gallium phosphide; nanowire; wurtzite; transmission electron microscopy;

机译：金属有机分子束外延;选择性外延;磷化镓;纳米线;紫立岩岩;透射电子显微镜;

相似文献

外文文献
中文文献
专利

1. Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy [J] . Halder Nripendra N., Kelrich Alexander, Cohen Shimon, Nanotechnology . 2017,第46期

机译：通过选择性区域蒸汽液体固体外延在锌混合间隙基板中生长纯紫立茨间隙纳米线
2. Efficient Electroluminescence in GaP p‐n Junctions Grown by Liquid‐Phase Epitaxy on Vapor‐Grown Substrates [J] . Journal of Applied Physics . 1967,第4期

机译：气相生长衬底上液相外延生长的GaP p-n结中的高效电致发光
3. Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy [J] . Fumiya Ishizaka, Keitaro Ikejiri, Katsuhiro Tomioka, Japanese journal of applied physics . 2013,第4Issue2期

机译：通过选择性区域金属有机气相外延在InP（111）A衬底上形成的富铟InGaP纳米线
4. GaPN-GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy [C] . S. Y. Moon, A. Utsumi, H. Yonezu, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：通过固体源分子束外延在间隙基板上生长的Gapn-Gap双异质结构发光二极管
5. Part I: Synthesis and characterization of titania and magnesium nanoparticles for hydrogen production and storage. Part II: Characterization and growth of branched silicon nanowires grown via a simultaneous vapor-liquid-solid and vapor-solid-solid mechanism. [D] . Shissler, Daniel Jay. 2015

机译：第一部分：用于制氢和储存氢的二氧化钛和镁纳米粒子的合成与表征。第二部分：通过同时的汽-液-固和汽-固-固机理生长的支化硅纳米线的表征和生长。
6. Fabrication of InxGa1−xN Nanowires on Tantalum Substrates by Vapor-Liquid-Solid Chemical Vapor Deposition [O] . Yan-Ling Hu, Yuqin Zhu, Huayu Ji, 2018

机译：汽液化学气相沉积法在钽基板上制备InxGa1-xN纳米线
7. RF Performance of Planar III–V Nanowire-Array Transistors Grown by Vapor–Liquid–Solid Epitaxy [O] . Kelson D. Chabak, Xin Miao, Chen Zhang, 2015

机译：通过气相 - 固体外延生长的平面III-V纳米线阵列晶体管的RF性能
8. Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy. [R] . Kasanaboina, P. K., Ojha, S. K., Sami, S. U., 2015

机译：用分子束外延生长Gaas / Gaassb核壳纳米线的带隙调谐。

Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅