Regrowth mechanism for oxide isolation of GaAs nanowires

Dvorak David; Darbandi Ali; Kavanagh Karen L.; Watkins Simon P.

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Regrowth mechanism for oxide isolation of GaAs nanowires

机译：GaAs纳米线氧化物分离的再生机制

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Oxide-isolated GaAs nanowires (NWs) were obtained through a lithography-free method in which axial growth of NWs coated in aluminum oxide (Al2O3) is restarted using an annealing step. NWs are grown using the vapor-liquid-solid method and coated in nanometer thin oxide films using atomic layer deposition. Continued growth at the oxide-coated nanoparticle (NP) occurs after the thermally-induced fracture of the oxide during annealing. This oxide fracture is observed to depend on NP diameter, oxide thickness and annealing temperature. A thermal expansion mismatch model for stresses on the oxide shell is put forward to explain these results.

机译：通过光刻的方法获得氧化物隔离的GaAs纳米线（NWS），其中使用退火步骤重新启动涂覆氧化铝（Al 2 O 3）中的NWS的轴向生长。使用蒸汽 - 液体固体方法生长NWS并使用原子层沉积涂覆纳米薄氧化物膜。在退火期间在氧化物的热诱导的骨折之后发生氧化覆盖的纳米颗粒（NP）的持续生长。观察到该氧化物骨折以取决于NP直径，氧化物厚度和退火温度。提出了一种用于氧化物壳上应力的热膨胀不匹配模型来解释这些结果。

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来源
《Nanotechnology》 |2017年第38期|共7页
作者
Dvorak David; Darbandi Ali; Kavanagh Karen L.; Watkins Simon P.;
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作者单位

Simon Fraser Univ Dept Phys 8888 Univ Dr Burnaby BC V5A 1S6 Canada;

Simon Fraser Univ Dept Phys 8888 Univ Dr Burnaby BC V5A 1S6 Canada;

Simon Fraser Univ Dept Phys 8888 Univ Dr Burnaby BC V5A 1S6 Canada;

Simon Fraser Univ Dept Phys 8888 Univ Dr Burnaby BC V5A 1S6 Canada;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
nanowires; regrowth; GaAs; oxide;

机译：纳米线;再生;GaAs;氧化物;

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专利

1. Regrowth mechanism for oxide isolation of GaAs nanowires [J] . Dvorak David, Darbandi Ali, Kavanagh Karen L., Nanotechnology . 2017,第38期

机译：GaAs纳米线氧化物分离的再生机制
2. Effects of VLS and VS mechanisms during shell growth in GaAs-AlGaAs core-shell nanowires investigated by transmission electron microscopy [J] . Scuderi Mario, Prete Paola, Lovergine Nico, Materials science in semiconductor processing . 2017,第期

机译：通过透射电子显微镜研究GaAs-Algaas核心壳纳米线壳生长期间VLS和VS机制的影响
3. High-k ZrO_2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition [J] . Konda R.B., White C., Smak J., Chemical Physics Letters . 2013,第Null期

机译：GaAs半导体上的高k ZrO_2介电薄膜，通过原子层沉积减少了天然氧化物的再生长
4. Physical Mechanisms of Radiation Response in Thick Isolation Oxides for Different Temperatures and Dose Rates [C] . M. G. Drosdetsky, G. I. Zebrev, A. M. Galimov, European Conference on Radiation and its Effects on Components and Systems . 2015

机译：不同温度和剂量率厚分离氧化物中辐射响应的物理机制
5. MATRIX-ISOLATION OF OXYGENATED SPECIES FROM PHOTOLYSES OF FORMALDEHYDE, GLYOXAL, HYDROGEN-SULFIDE, CARBONYL-SULFIDE, AND CARBON-DISULFIDE IN AN OXYGEN MATRIX AT 12-19 K THROUGH THE MECHANISM OF EXPANDING PHOTOLYSIS CAGE (MATRIX-ISOLATION, PHOTOOXIDATION). [D] . TSO, TAI-LY. 1984

机译：通过扩大光解机理（光解的机理），从12-19 K的氧气基质中分离甲醛，乙二醛，氢硫化物，羰基硫和碳二硫化物中的氧化物种的基质。
6. Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition [O] . Lei Shang, Longfei Song, Yiqian Wang, 2018

机译：固源两步化学气相沉积法制备InGaAs纳米线的形成机理
7. Lithography-free oxide isolation of GaAs nanowires using the VLS growth method [O] . Dvorak David Joel 2017

机译：使用VLS生长方法对GaAs纳米线进行无光刻隔离

Regrowth mechanism for oxide isolation of GaAs nanowires

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