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Electron transport and room temperature single-electron charging in 10nm scale PtC nanostructures formed by electron beam induced deposition

机译：电子传输和室温单电子在10nm刻度纳米结构中的单电子充电，通过电子束诱导沉积形成

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摘要

Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size similar to 20 nm, integrated within similar to 100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use similar to 20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.
机译：通过电子束诱导沉积形成铂 - 碳纳米复合材料的纳米结构。 这些由纳米块和纳米线组成，最小尺寸与20nm相似，集成在类似于100nm纳米盖N型硅环上晶体管结构内。 纳米晶体管使用类似于20nm Pt / c纳米块，隧道耦合到Pt / C纳米线电极，桥接Si Nanogaps。 已经测量室温单电子晶体管操作，并观察到单电子电流振荡和“库仑钻石”。 在纳米线晶体管中，从290〜8k的温度依赖性建议，电流是沿电流路径跨电流屏障跨电位障碍物的热激活和隧道传输的组合，并且Pt / c在低温下是p型。

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