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首页> 外文期刊>Nanotechnology >Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-xBix explored by atom probe tomography and HAADF-STEM
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Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-xBix explored by atom probe tomography and HAADF-STEM

机译：由原子探测断层扫描和HAADF-STEM探索的Movpe-Growlow Gaas1-XBIX中的退火诱导的沉淀形成行为

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摘要

The effects of a 45 min anneal at 800 degrees C on the physical properties and microstructure of a five-period GaAs1-xBix/GaAs1-yBiy superlattice with y not equal x were studied using room-temperature photoluminesence spectroscopy, high-resolution x-ray diffraction, high-angle annular-dark-field scanning transmission electron microscopy (HAADF-STEM), and atom probe tomography (APT). The anneal resulted in a substantial increase of the photoluminesence intensity over that observed in the as-deposited sample, indicating annihilation of non-radiative recombination centers and stability of the superlattice structure during the anneal. However, some precipitation of Bi from the GaAs1-xBix also occurred. The characteristics of phase separation that occurred within these precipitates were investigated in detail by APT and HAADF-STEM. They indicate that the precipitation reaction involves formation of embedded nano-scale liquid droplets that can accelerate local Bi dissolution from the GaAs1-xBix matrix by moving through it. Preservation of nanometer scale sharp Bi concentration gradients in the growth direction suggested that very little solid state diffusion of Bi occurred during the anneal. The observed gradient in precipitate number density with distance from the sample surface further supports hypotheses of an enabling role of Ga vacancies in the precipitation process.
机译：使用室温光致发光光谱，高分辨率X射线，研究了45℃的物理性质和800℃的物理性质和微观结构对800℃的物理性质和微观结构的影响，高分辨率X射线衍射，大角度环形 - 暗场扫描透射电子显微镜（HAADF-STEM）和原子探测断层扫描（APT）。退火导致在沉积的样品中观察到的光致发光强度大幅增加，表明在退火期间湮灭非辐射重组中心和超晶格结构的稳定性。然而，来自GaAs1-Xbix的一些沉淀也是发生的。通过APT和Haadf-茎详细研究了这些沉淀物内发生的相分离的特征。它们表明沉淀反应涉及形成嵌入的纳米级液滴，其可以通过移动通过GaAs1-Xbix基质来加速局部Bi溶解。在生长方向上保存纳米尺度尖锐的Bi浓度梯度表明，在退火期间，BI的固态扩散非常少。观察到的沉淀数密度与距样品表面距离的沉淀数密度进一步支持Ga空位在沉淀过程中的能力作用的假设。

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  • 来源
    《Nanotechnology》 |2017年第21期|共15页
  • 作者

    Wood Adam W.; Chen Weixin; Kim Honghyuk; Guan Yingxin; Forghani K.; Anand A.; Kuech T. F.; Mawst L. J.; Babcock S. E.;

  • 作者单位

    Univ Wisconsin Madison Mat Sci &

    Engn 1509 Univ Ave Madison WI 53706 USA;

    Univ Wisconsin Madison Mat Sci &

    Engn 1509 Univ Ave Madison WI 53706 USA;

    Univ Wisconsin Madison Elect &

    Comp Engn 1415 Engn Dr Madison WI 53706 USA;

    Univ Wisconsin Madison Mat Sci &

    Engn 1509 Univ Ave Madison WI 53706 USA;

    Univ Wisconsin Madison Elect &

    Comp Engn 1415 Engn Dr Madison WI 53706 USA;

    Univ Wisconsin Madison Elect &

    Comp Engn 1415 Engn Dr Madison WI 53706 USA;

    Univ Wisconsin Madison Mat Sci &

    Engn 1509 Univ Ave Madison WI 53706 USA;

    Univ Wisconsin Madison Elect &

    Comp Engn 1415 Engn Dr Madison WI 53706 USA;

    Univ Wisconsin Madison Mat Sci &

    Engn 1509 Univ Ave Madison WI 53706 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    GaAs1-xBix; atom probe; HAADF; precipitate; anneal;

    机译：Gaas1-xbix;原子探针;哈达夫;沉淀物;退火;

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