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首页> 外文期刊>RSC Advances >3D nanorhombus nickel nitride as stable and cost-effective counter electrodes for dye-sensitized solar cells and supercapacitor applications
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3D nanorhombus nickel nitride as stable and cost-effective counter electrodes for dye-sensitized solar cells and supercapacitor applications

机译：3D纳米环形氮化物作为染料敏化太阳能电池和超级电容器应用的稳定且经济高效的计数器

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摘要

Transition metal nitride based materials have attracted significant interest owing to their excellent properties and multiple applications in the field of electrochemical energy conversion and storage devices. Herein we synthesize 3D nanorhombus nickel nitride (Ni3N) thin films by adopting a reactive radio frequency magnetron sputtering process. The as-deposited 3D nano rhombus Ni3N thin films were utilized as cost-effective electrodes in the fabrication of supercapacitors (SCs) and dye-sensitized solar cells (DSSCs). The structure, phase formation, surface morphology and elemental composition of the as-deposited Ni3N thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS) and atomic force microscopy (AFM). The electrochemical supercapacitive performance of the Ni3N thin films was examined by cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) techniques, in 3 M KOH supporting electrolyte. The areal capacitance of the Ni3N thin film electrode obtained from CV analysis was 319.5 mF cm(-2) at a lower scan rate of 10 mV s(-1). Meanwhile, the Ni3N thin film showed an excellent cyclic stability and retained 93.7% efficiency of its initial capacitance after 2000 cycles at 100 mV s(-1). Interestingly, the DSSCs fabricated with a Ni3N CE showed a notable power energy conversion efficiency of 2.88% and remarkable stability. The prominent performance of the Ni3N thin film was ascribed mainly due to good conductivity, high electrochemically active sites with excellent 3D nano rhombus structures and high electrocatalytic activity. Overall, these results demonstrate that the Ni3N electrode is capable of being considered for efficient SCs and DSSCs. This investigation also offers an essential directive for the advancement of energy storage and conversion devices.
机译：由于它们在电化学能量转换和储存装置领域的优异性能和多种应用，过渡金属氮化物的材料引起了显着的兴趣。这里，通过采用反应射频磁控溅射工艺，通过采用反应射频磁控溅射工艺来合成3D纳米环镍氮化镍（Ni3N）薄膜。沉积的3D纳米菱形Ni3N薄膜在制造超级电容器（SCS）和染料敏化太阳能电池（DSSC）的制造中被用作成本有效的电极。通过X射线衍射（XRD），场发射扫描电子显微镜（FESEM），能量分散X射线光谱（EDS）的结构，相形成，表面形态和元素组成的结构，相形成，表面形态和元素组成。原子力显微镜（AFM）。通过循环伏安法（CV）和GALVANOTATIC电荷 - 放电（GCD）技术，在3M KOH支撑电解质中检查Ni3N薄膜的电化学超电容性能。在CV分析中获得的Ni3N薄膜电极的面积电容为10mV S（-1）的较低扫描速率为319.5mF cm（-2）。同时，Ni3N薄膜显示出优异的循环稳定性，并在100mV S（-1）时在2000次循环后保留93.7％的初始电容效率。有趣的是，用Ni3N CE制造的DSSCS表示值得注意的功率转换效率为2.88％，稳定性显着。 Ni3N薄膜的突出性能主要是由于良好的导电性，高电化学活性位点，具有优异的3D纳米菱形结构和高电催化活性。总的来说，这些结果表明，Ni3N电极能够被认为是有效的SCS和DSSCs。该调查还提供了储能和转换设备进步的基本指令。

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  • 来源
    《RSC Advances》 |2018年第16期|共8页
  • 作者

    Prasad Saradh; Durai G.; Devaraj D.; AlSalhi Mohamad Saleh; Theerthagiri J.; Arunachalam Prabhakarn; Gurulakshmi M.; Raghavender M.; Kuppusami P.;

  • 作者单位

    Kalasalingam Acad Res &

    Educ Sch Elect &

    Elect Technol Dept Elect &

    Elect Engn Virudunagar 626126 Tamil Nadu India;

    Sathyabama Inst Sci &

    Technol Deemed Univ Ctr Excellence Energy Res Chennai 600119 Tamil Nadu India;

    Kalasalingam Acad Res &

    Educ Sch Elect &

    Elect Technol Dept Elect &

    Elect Engn Virudunagar 626126 Tamil Nadu India;

    King Saud Univ Dept Phys &

    Astron Coll Sci Laser Diag Canc Riyadh 11451 Saudi Arabia;

    Sathyabama Inst Sci &

    Technol Deemed Univ Ctr Excellence Energy Res Chennai 600119 Tamil Nadu India;

    King Saud Univ Dept Chem Coll Sci Electrochem Res Grp Riyadh 11451 Saudi Arabia;

    Yogi Vemana Univ Dept Phys Kadapa 516003 AP India;

    Yogi Vemana Univ Dept Phys Kadapa 516003 AP India;

    Sathyabama Inst Sci &

    Technol Deemed Univ Ctr Excellence Energy Res Chennai 600119 Tamil Nadu India;

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