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首页> 外文期刊>RSC Advances >Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

机译：具有通道钝化层的高稳定性钨掺杂铟 - 氧化铟薄膜晶体管的移动性增强

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摘要

This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO2 gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO2 gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.
机译：本研究研究了具有不同背沟钝化层（BPLS）的无定形钨掺杂铟 - 氧化铟锌膜晶体管的电特性和物理分析，其通过离子轰击过程沉积。 观察到迁移率增加的10倍，并归因于后孔的施主式氧空位的产生，其由BPL材料的氧解吸和Gibbs自由能引起的。 通过XPS分析研究了该机制。 另一方面，施加HFO2栅极绝缘体用于inwzno TFT装置以控制极端导电通道并调节负阈值电压。 利用HFO2栅极绝缘体和合适的BPL，INWZNO TFT器件在暴露于环境空气时表现出良好的电气特性和显着的寿命。

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  • 来源
    《RSC Advances》 |2018年第13期|共6页
  • 作者

    Ruan Dun-Bao; Liu Po-Tsun; Chiu Yu-Chuan; Kuo Po-Yi; Yu Min-Chin; Gan Kai-Jhih; Chien Ta-Chun; Sze Simon M.;

  • 作者单位

    Natl Chiao Tung Univ Dept Elect Engn Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Elect Engn Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Elect Engn Hsinchu 30010 Taiwan;

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  • 正文语种 eng
  • 中图分类 化学;
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