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Bilayer graphene/HgCdTe based very long infrared photodetector with superior external quantum efficiency, responsivity, and detectivity

机译：双层石墨烯/ HGCDTE非常长的红外光电探测器，外部量子效率优异，响应性和探测器

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摘要

We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg1-xCdx=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector. The unique absorption properties of graphene enable a long carrier lifetime of charge carriers contributing to the carrier-multiplication due to impact ionization and, hence, large photocurrent and high quantum efficiency. The proposed p(+)-BLG/n-Hg0.8133Cd0.1867Te photodetector is characterized and analyzed in terms of different electrical and optical characteristic parameters using computer simulations. The obtained results are further validated by developing an analytical model based on drift-diffusion, tunneling and Chu's methods. The photodetector has demonstrated a superior performance including improved dark current density (approximate to 1.75 x 10(-14) mu A cm(-2)), photocurrent density (approximate to 8.33 mu A cm(-2)), internal quantum efficiency (QE(int) approximate to 99.49%), external quantum efficiency (QE(ext) approximate to 89%), internal photocurrent responsivity (approximate to 13.26 A W-1), external photocurrent responsivity (approximate to 9.1 A W-1), noise equivalent power (approximate to 8.3 x 10(-18) W), total noise current (approximate to 1.06 fA), signal to noise ratio (approximate to 156.18 dB), 3 dB cut-off frequency (approximate to 36.16 GHz), and response time of 9.4 ps at 77 K. Furthermore, the effects of different external biasing, light power intensity, and temperature are evaluated, suggesting a high QE(ext) of 3337.70% with a bias of -0.5 V near room temperature.
机译：我们提出了一种高性能的双层石墨烯（BLG）和碲化镉汞基于非常长波长红外线（VLWIR）导电光电检测器（的Hg1-xCdx = 0.1867Te）异质结。石墨烯的独特吸收特性使由于碰撞电离，因此，大的光电流和高量子效率的电荷载体有助于载流子倍增长载流子寿命。所提出的P（+） - BLG /正Hg0.8133Cd0.1867Te光检测器的特征在于，并且在使用计算机模拟不同电气和光学特性参数方面进行分析。所得到的结果通过基于漂移扩散，隧穿和储的方法显影的分析模型进一步验证。光检测器已显示出优异的性能，包括改进的暗电流密度（近似1.75×10（-14）亩甲厘米（-2）），光电流密度（近似8.33亩甲厘米（-2）），内部量子效率（ QE（INT）近似于99.49％），外部量子效率（QE（EXT）近似于89％），内部光电流响应度（接近13.26甲W-1），外部光电流响应度（接近9.1 W-1），噪声等效功率（近似为8.3×10（-18）W），总的噪声电流（近似1.06 FA）信号噪声比（近似于156.18分贝），3 dB截止频率（近似至36.16千兆赫），和在77K此外9.4 PS的响应时间，不同的外部偏压，光功率强度，和温度的影响进行评价，暗示3337.70％的高QE（EXT）具有-0.5V的室温附近的偏压。

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  • 来源
    《RSC Advances》 |2018年第69期|共14页
  • 作者

    Bansal Shonak; Sharma Kuldeep; Jain Prince; Sardana Neha; Kumar Sanjeev; Gupta Neena; Singh Arun K.;

  • 作者单位

    Deemed Be Univ Punjab Engn Coll Dept Elect &

    Commun Engn Sect 12 Chandigarh 160012 India;

    Deemed Be Univ Punjab Engn Coll Dept Elect &

    Commun Engn Sect 12 Chandigarh 160012 India;

    Deemed Be Univ Punjab Engn Coll Dept Elect &

    Commun Engn Sect 12 Chandigarh 160012 India;

    Indian Inst Technol Dept Met &

    Mat Engn Ropar India;

    Deemed Be Univ Punjab Engn Coll Dept Appl Sci Sect 12 Chandigarh 160012 India;

    Deemed Be Univ Punjab Engn Coll Dept Elect &

    Commun Engn Sect 12 Chandigarh 160012 India;

    Deemed Be Univ Punjab Engn Coll Dept Elect &

    Commun Engn Sect 12 Chandigarh 160012 India;

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