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The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

机译：后沉积退火条件对溅射氧化铜膜结构和热电性能的影响

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摘要

The development of thin-film thermoelectric applications in sensing and energy harvesting can benefit largely from suitable deposition methods for earth-abundant materials. In this study, p-type copper oxide thin films have been prepared on soda lime silicate glass by direct current (DC) magnetron sputtering at room temperature from a pure copper metallic target in an argon atmosphere, followed by subsequent annealing steps at 300 degrees C under various atmospheres, namely air (CuO:air), nitrogen (CuO:N) and oxygen (CuO:O). The resultant films have been studied to understand the influence of various annealing atmospheres on the structural, spectroscopic and thermoelectric properties. X-ray diffraction (XRD) patterns of the films showed reflexes that could be assigned to those of crystalline CuO with a thin mixed Cu((I))Cu((II))oxide, which was also observed by near edge X-ray absorption fine structure spectroscopy (NEXAFS). The positive Seebeck coefficient (S) reached values of up to 204 mu V K-1, confirming the p-type behavior of the films. Annealing under oxygen provided a significant improvement in the electrical conductivity up to 50 S m(-1), resulting in a power factor of 2 mu W m(-1)K(-2). The results reveal the interplay between the intrinsic composition and the thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by simply varying the annealing atmosphere.
机译：在感测和能量收集中的薄膜热电应用的开发可以很大程度上从合适的土壤沉积方法中受益。在该研究中，通过在氩气氛中的纯铜金属靶的室温下通过直流（DC）磁控溅射在苏打石灰硅酸盐玻璃上制备了p型氧化铜薄膜，然后在300摄氏度下进行后续退火步骤在各种环境下，即空气（CUO：空气），氮（CuO：N）和氧气（CuO：O）。已经研究了所得薄膜以了解各种退火氛围对结构，光谱和热电性能的影响。薄膜的X射线衍射（XRD）图案显示反应，其可以用薄的混合Cu（（I））Cu（（ii））氧化物分配给结晶CuO的氧化物，其也被近边缘X射线观察到的氧化物吸收细结构光谱（Nexafs）。阳性塞贝克系数达到高达204μmVk-1的值，确认薄膜的p型行为。在氧气下的退火提供了高达50℃（-1）的电导率显着改善，导致2μWM（-1）k（-2）的功率因数。结果揭示了内在组合物与混合氧化铜薄膜的热电性能之间的相互作用，这通过简单地改变退火气氛可以精细地调节。

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