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Colloidal quantum dot light-emitting diodes employing solution-processable tin dioxide nanoparticles in an electron transport layer

机译:胶体量子点发光二极管在电子传输层中使用溶液加工锡二氧化锡纳米颗粒

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摘要

Colloidal quantum-dot-based light-emitting diodes (QD-LEDs) have gained tremendous attention as great candidates to potentially replace current emissive display technologies. The luminescence efficiency of a QD LED has increased rapidly in the past decade; this was triggered by the use of metal oxides in the charge transport layers, particularly zinc oxide (ZnO) for the electron transport layer (ETL). However, the ZnO ETL often results in undesirable device performance such as efficiency roll-off and poor device stability because of excessive electron injection into the QD emissive layer. Here, we explore solution-processable tin dioxide (SnO2) nanoparticles (NPs) as alternatives to ZnO NPs for the ETL in QD-LEDs. We evaluated the thin-film quality and electrical performance of SnO2 NPs and then applied them to the ETL for constructing QD-LEDs. As a result of the smooth surface morphology, moderate electron-transport ability, and lower carrier concentration compared to ZnO NPs, the QD-LED with SnO2 NP-ETL exhibited improved performance in terms of lower turn-on and operating voltages, maximum luminance, improved efficiency roll-off, and improved power efficiency over the reference device with the ZnO NP-ETL. This shows promising potential for SnO2 NPs in optoelectronic applications.
机译:基于胶体量子点的发光二极管(QD-LED)对较大的候选人进行了巨大的关注,以妨碍电流发光展示技术。 QD LED的发光效率在过去十年中迅速增加;这是通过在电子传输层(ETL)中的电荷输送层中的金属氧化物,特别是氧化锌(ZnO)的金属氧化物来触发。然而,ZnO ETL通常导致不希望的器件性能,例如效率滚降和装置稳定性差,因为过多的电子注入QD发光层。在此,我们探讨解决方案 - 可加工的锡 - 二氧化碳(SnO2)纳米颗粒(NPS)作为QD-LED中ETL的ZnO NP的替代品。我们评估了SnO2 NP的薄膜质量和电气性能,然后将它们施加到ETL中以构建QD-LED。相比于氧化锌纳米颗粒的光滑的表面形态,中度电子传输能力,和低载流子浓度的结果,QD-LED与的SnO2 NP-ETL表现出较低的导通和操作电压,最大亮度方面改进的性能,利用ZnO NP-ETL改进了效率滚降,提高了参考装置的功率效率。这显示了光电应用中SnO2 NP的有希望的潜力。

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  • 来源
    《RSC Advances》 |2020年第14期|共5页
  • 作者单位

    Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &

    Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &

    Comp Engn Seoul 08826 South Korea;

    Gumi Elect &

    Informat Technol Res Inst GERI Innovat Technol Res Div Realist Media Res Ctr Gumi 39253 South Korea;

    Sungkyunkwan Univ SKKU Ctr Artificial Atoms Dept Energy Sci Suwon 16419 Gyeonggi Do South Korea;

    Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &

    Comp Engn Seoul 08826 South Korea;

    Pusan Natl Univ Dept Elect Engn Busan 46241 South Korea;

    Gumi Elect &

    Informat Technol Res Inst GERI Innovat Technol Res Div Realist Media Res Ctr Gumi 39253 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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