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Highly luminescent polyethylene glycol-passivated graphene quantum dots for light emitting diodes

机译:高温聚乙二醇钝化石墨烯量子点,用于发光二极管

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摘要

The emergence of fluorescent graphene quantum dots (GQDs) is expected to enhance the usefulness of quantum dots (QDs), in terms of their unique luminescence, photostability, low toxicity, chemical resistance, and electron transport properties. Here we prepared blue-photoluminescent polyethylene glycol GQDs (PEG-GQDs) through PEG surface passivation. The photoluminescence (PL) quantum yield (QY) of PEG-GQDs with 320 nm excitation was about 4.9%, which was higher than that of pure GQDs. The as-fabricated PEG-GQDs with high QY were then used as light-emitting diode (PGQD-LED) emitters, in which the GQDs were incorporated into polymeric host layers in a multilayer electroluminescent device; blue emission with a luminance exceeding 800 cd m(-2)was achieved, thus demonstrating the potential of PEG-GQDs as emitters in electroluminescence applications. Furthermore, the fluorescence mechanism of PEG-GQDs was investigated and proved that the origin of strong fluorescence of PEG-GQDs is associated with the luminescence from intrinsic states. The highly fluorescent PEG-GQDs will allow new devices, such as multicolor LEDs, to be developed with extraordinary properties, by tailoring the intrinsic and extrinsic states.
机译:在其独特的发光,光稳定性,低毒性,耐化学性和电子传输性能方面,预期荧光石墨烯量子点(GQDS)的出现预期增强量子点(QDS)的有用性。在这里,我们通过PEG表面钝化制备了蓝色光致发光的聚乙二醇GQDS(PEG-GQD)。具有320nm激发的PEG-GQD的光致发光(PL)量子产率(QY)约为4.9%,其高于纯GQDS。然后使用具有高Qy的制造的PEG-GQDS作为发光二极管(PGQD-LED)发射器,其中将GQD掺入多层电致发光器件中的聚合物主体层中;达到亮度超过800cdm(-2)的蓝色发射,从而证明PEG-GQDS作为电致发光应用中的发射器的电位。此外,研究了PEG-GQDS的荧光机制,并证明了PEG-GQDS强荧光的起源与来自内在状态的发光有关。高度荧光PEG-GQD将允许通过剪裁内在和外在状态,以具有非凡性质的多色设备,例如多色LED。

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  • 来源
    《RSC Advances》 |2020年第46期|共6页
  • 作者单位

    Kongju Natl Univ Div Adv Mat Engn Cheonan 32588 Chungnam South Korea;

    Kongju Natl Univ Div Adv Mat Engn Cheonan 32588 Chungnam South Korea;

    Kongju Natl Univ Div Adv Mat Engn Cheonan 32588 Chungnam South Korea;

    Kongju Natl Univ Div Adv Mat Engn Cheonan 32588 Chungnam South Korea;

    Kongju Natl Univ Div Adv Mat Engn Cheonan 32588 Chungnam South Korea;

    Dongseo Univ Div Chem Engn 47 Jurye Ro Busan 47011 South Korea;

    Korea Inst Ceram Engn &

    Technol Engn Ceram Ctr Icheon 17303 Gyeonggi South Korea;

    Chungbuk Natl Univ Dept Adv Mat Engn Cheonju 28644 Chungbuk South Korea;

    Kongju Natl Univ Div Adv Mat Engn Cheonan 32588 Chungnam South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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