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Realistic dielectric response of high temperature sintered ZnO ceramic: a microscopic and spectroscopic approach

机译：高温烧结ZnO陶瓷的现实介电响应：一种微观和光谱法

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High temperature sintering (1200-1400 degrees C) has been performed on ZnO ceramics. An X-ray Absorption Fine Structure (XAFS) study shows that high sintering temperature introduces a constant amount of V(O)and V(Zn)defects without any significant effect on the crystal or electronic structure of Wurtzite ZnO. The combined effects of grain boundaries and voids are considered responsible for the apparent colossal dielectric constant (epsilon ') > 10(4)at low frequency (similar to 10(2)Hz) for all the sintered ZnO ceramics. The superior contact among grains of the ZnO-1200 sample enhances both the interfacial and orientational polarization of the Zn2+-V(O)dipoles, which results in the increase of low and high frequency dielectric constants (epsilon ') and the corresponding dielectric loss (tan delta) also increases. On the other hand, high temperature sintering of ZnO at 1300 degrees C and 1400 degrees C introduces voids at the expense of reduced grain and grain boundary contact areas, thus affecting both the interfacial and orientational polarization with corresponding reduction of dielectric constant (epsilon ') and dielectric loss. Orientational polarizations due to Zn2+-V(O)dipoles are suggested to remain fixed and it is the microstructure which controls the dielectric properties of high temperature sintered ZnO ceramics.
机译：在ZnO陶瓷上进行了高温烧结（1200-1400℃）。 X射线吸收细结构（XAFS）研究表明，高烧结温度引入恒定量的V（O）和V（Zn）缺陷，而没有对紫立岩ZnO的晶体或电子结构的任何显着影响。谷物边界和空隙的组合效果被认为是在低频（类似于所有烧结ZnO陶瓷的低频率（类似于10（2）Hz）的表观致致密介电常数（Epsilon'）> 10（4）。 ZnO-1200样品的晶粒之间的卓越接触增强了Zn2 + -V（O）偶极子的界面和方向极化，这导致低频和高频电介质常数（epsilon'）和相应的介电损耗增加（ Tan Delta）也增加了。另一方面，在1300摄氏度和1400摄氏度下ZnO的高温烧结以减少的晶粒和晶粒边界接触区域为代价引入空隙，从而影响界面和校正偏振，相应的介电常数（epsilon'）和介电损失。建议由于Zn2 + -V（O）偶极子引起的定向偏振保持固定，并且它是控制高温烧结ZnO陶瓷的介电性能的微观结构。

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