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首页> 外文期刊>RSC Advances >Modulation of the doping level of PEDOT:PSS film by treatment with hydrazine to improve the Seebeck coefficient
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Modulation of the doping level of PEDOT:PSS film by treatment with hydrazine to improve the Seebeck coefficient

机译：调制PEDOT的掺杂水平：PSS薄膜通过用肼处理改善塞贝克系数

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摘要

As the most popular conducting polymer, poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is widely used for a variety of applications, including thermoelectrics. This paper reports the modulation of the doping level by treatment with hydrazine to improve the Seebeck coefficient of PEDOT:PSS films. PEDOT:PSS films were first treated with formic acid followed by hydrazine, leading to a significant increase in the Seebeck coefficient from 17.5 to 42.7 mu V K-1, about 2.5 times higher than that of the pristine film partially at the expense of electrical conductivity. An optimum power factor of 93.5 mu W K-2 m(-1), being 2.4 times that of the one treated with only formic acid, was achieved. The substantial improvement in the Seebeck coefficient and the power factor is collectively attributed to the removal of the PSS, and more importantly, the reduction of the doping level of PEDOT by the hydrazine treatment, which is evidenced clearly by UV-vis-NIR spectroscopy, XPS and Raman spectroscopy.
机译：作为最流行的导电聚合物，聚（3,4乙二氧基噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）广泛用于各种应用，包括热电。本文通过用肼处理来报告掺杂水平的调节，以改善PEDOT：PSS薄膜的塞贝克系数。 PEDOT：PSS薄膜首先用甲酸处理，接着用肼处理，导致塞贝克系数的显着增加，从17.5至42.7μmVk-1，比原始膜的牺牲部分高约2.5倍以上的电导率。最佳功率因数为93.5μmWk-2m（-1），仅达到仅用甲酸处理的2.4倍。塞贝克系数和功率因数的显着改善是集体归因于PSS的去除，更重要的是，通过肼处理通过硫氮处理来减少胶圈的掺杂水平，这通过UV-Vis-Nir光谱清楚地证明， XPS和拉曼光谱。

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  • 来源
    《RSC Advances》 |2020年第3期|共7页
  • 作者

    Yemata Temesgen Atnafu; Zheng Yun; Kyaw Aung Ko Ko; Wang Xizu; Song Jing; Chin Wee Shong; Xu Jianwei;

  • 作者单位

    ASTAR Inst Mat Res &

    Engn 2 Fusionopolis Way Singapore 138634 Singapore;

    ASTAR Inst Mat Res &

    Engn 2 Fusionopolis Way Singapore 138634 Singapore;

    ASTAR Inst Mat Res &

    Engn 2 Fusionopolis Way Singapore 138634 Singapore;

    ASTAR Inst Mat Res &

    Engn 2 Fusionopolis Way Singapore 138634 Singapore;

    ASTAR Inst Mat Res &

    Engn 2 Fusionopolis Way Singapore 138634 Singapore;

    Natl Univ Singapore Dept Chem 3 Sci Dr 3 Singapore 117543 Singapore;

    ASTAR Inst Mat Res &

    Engn 2 Fusionopolis Way Singapore 138634 Singapore;

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  • 正文语种 eng
  • 中图分类 化学;
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