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首页> 外文期刊>RSC Advances >Enhancing the performance of blue quantum-dot light-emitting diodes through the incorporation of polyethylene glycol to passivate ZnO as an electron transport layer
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Enhancing the performance of blue quantum-dot light-emitting diodes through the incorporation of polyethylene glycol to passivate ZnO as an electron transport layer

机译：通过将聚乙二醇掺入钝化ZnO作为电子传输层来增强蓝量子点发光二极管的性能

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摘要

The balance between charge transport and charge injection is always a key factor in enhancing the performance of quantum-dot light-emitting diodes (QD-LEDs), particularly for the blue QDs due to their large optical band gap and relatively low valence band level compared with their green and red counterparts. High performance blue QD-LEDs have been demonstrated by blending polyethylene glycol (PEG) into solution-processed ZnO nanocrystals as the electron transport layer. PEG can effectively tune the electron mobility of ZnO and simultaneously passivate its surface defect states. As a result, the maximum current efficiency (CE) and external quantum efficiency (EQE) of the blue QD-LEDs increased from 4.33 cd A(-1)and 9.98% for pure ZnO to 8.03 cd A(-1)and 14.84% for 4% PEG blended into ZnO, respectively. Furthermore, operational lifetime of the device is also significantly improved from 8.95 h to 25.06 h. This result indicates that PEG is a promising material for regulating the charge balance of the blue QD-LEDs.
机译：电荷传输和电荷注入之间的平衡是总是在提高的性能的关键因素量子点发光二极管（QD-LED）的，特别是对于蓝色量子点由于其大的光学带隙和相对低的价带能级相比与他们的绿色和红色的同行。高性能蓝色QD-LED已经被证明通过混合聚乙二醇（PEG）到溶液中处理的氧化锌的纳米晶体作为电子传输层。 PEG可有效调ZnO的电子迁移率，并且同时钝化其表面缺陷态。其结果是，蓝色QD-LED的最大电流效率（CE）和外部量子效率（EQE）从4.33 CD A（-1）和9.98％增加为纯的ZnO到8.03 CD A（-1）和14.84％ 4％PEG分别混入的ZnO。此外，该装置的运行寿命也显著从8.95小时至25.06ħ提高。这一结果表明，PEG是用于调节蓝色QD-LED的电荷平衡有前途的材料。

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  • 来源
    《RSC Advances》 |2020年第39期|共7页
  • 作者

    Sun Jun-hao; Huang Jia-hui; Lan Xu-yan; Zhang Feng-chun; Zhao Ling-zhi; Zhang Yong;

  • 作者单位

    South China Normal Univ Inst Semicond Sci &

    Technol Guangzhou 510631 Peoples R China;

    South China Normal Univ Inst Semicond Sci &

    Technol Guangzhou 510631 Peoples R China;

    South China Normal Univ Inst Semicond Sci &

    Technol Guangzhou 510631 Peoples R China;

    South China Normal Univ Inst Semicond Sci &

    Technol Guangzhou 510631 Peoples R China;

    South China Normal Univ Inst Semicond Sci &

    Technol Guangzhou 510631 Peoples R China;

    South China Normal Univ Inst Semicond Sci &

    Technol Guangzhou 510631 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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