Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Xu Peipei; Liang Jiakun; Li Hong; Liu Fengbin; Tie Jun; Jiao Zhiwei; Luo Jing; Lu Jing

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Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

机译：单层GEES和Gete隧道场效应晶体管的装置性能限制和负电容

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Exploring the device performance limits is meaningful for guiding practical device fabrication. We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore the device performance limits of the TFETs based on monolayer (ML) GeSe and GeTe along with their NC counterparts. With the ferroelectric dielectric acting as a negative capacitance material, the device performances of both the ML GeSe and GeTe NCTFETs outperform their TFET counterparts, particularly for the on-state current (I-on). I-on of the optimal ML GeSe and GeTe TFETs fulfills the demands of the International Technology Roadmap for Semiconductors (ITRS 2015 version) for low power (LP) and high performance (HP) devices, at the "6/5" node range, while with the aid of 80 nm and 50 nm thickness of ferroelectric SrBi2Nb2O9, both their NC counterparts extend the fulfillments at the "4/3" node range.

机译：探索设备性能限制对于引导实用的设备制造是有意义的。我们提出了具有负电容（NC）的原型隧道场效应晶体管（TFET），并使用严格的AB Initio量子传输仿真来探索基于单层（ML）GESE的TFET的器件性能限制，以及GetE与其NC对应物一起。利用作为负电容材料的铁电介质，ML GESE和GetE NCTFET的装置性能优于其TFET对应物，特别是对于导通状态电流（I-ON）。最佳ML GEES和Gete TFETS的I-ON符合半导体（ITRS 2015版）的国际技术路线图的需求，用于低功耗（LP）和高性能（HP）设备，在“6/5”节点范围内，虽然借助于80nm和50nm厚度的铁电SRBI2NB2O9，但它们的NC对应部分都延长了“4/3”节点范围的实现。

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《RSC Advances》 |2020年第27期|共8页
作者
Xu Peipei; Liang Jiakun; Li Hong; Liu Fengbin; Tie Jun; Jiao Zhiwei; Luo Jing; Lu Jing;
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作者单位

North China Univ Technol Coll Mech &

Mat Engn Beijing 100144 Peoples R China;

North China Univ Technol Coll Mech &

Mat Engn Beijing 100144 Peoples R China;

North China Univ Technol Coll Mech &

Mat Engn Beijing 100144 Peoples R China;

North China Univ Technol Coll Mech &

Mat Engn Beijing 100144 Peoples R China;

North China Univ Technol Coll Mech &

Mat Engn Beijing 100144 Peoples R China;

North China Univ Technol Coll Mech &

Mat Engn Beijing 100144 Peoples R China;

Beijing Res Inst Automat Machinery Ind Beijing Peoples R China;

Peking Univ State Key Lab Mesoscop Phys Beijing 100871 Peoples R China;

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正文语种 eng
中图分类化学;
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1. Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors [J] . Xu Peipei, Liang Jiakun, Li Hong, RSC Advances . 2020,第27期

机译：单层GEES和Gete隧道场效应晶体管的装置性能限制和负电容
2. Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene [J] . Li Hong, Xu Peipei, Xu Lin, Semiconductor science and technology . 2019,第8期

机译：基于单层砷，锑和铋的负电容隧穿场效应晶体管
3. Charge-plasma-based super-steep negative capacitance junctionless tunnel field effect transistor: design and performance [J] . Singh S., Pal P., Kondekar P.N. Electronics Letters . 2014,第25期

机译：基于电荷等离子体的超陡负电容无结隧道场效应晶体管：设计与性能
4. Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current [C] . Nadim Chowdhury, S. M. Farhaduzzaman Azad, Quazi D.M. Khosru Symposium on Solid State Topics General Session;Meeting of The Electrochemical Society . 2014

机译：负电容隧道场效应晶体管：一种具有低亚阈值摆幅和高导通电流的新型器件
5. Sub-10nm Transistors for Low Power Computing: Tunnel FETs and Negative Capacitance FETs [D] . Sharma, Ankit. 2018

机译：用于低功率计算的低于10nm晶体管：隧道FET和负电容FET
6. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors [O] . Eunah Ko, Jaemin Shin, Changhwan Shin 2018

机译：用于低功率应用的陡峭开关设备：负差分电容/电阻场效应晶体管
7. Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current [O] . Chowdhury, Nadim, Azad, S. M. Farhaduzzaman, Khosru, Quazi D. M. 2014

机译：负电容隧道场效应晶体管：一种新型器件低亚阈值摆幅和高导通电流
8. Ensemble Monte Carlo Simulation of Real Space Transfer (NERFET/CHINT) (Negative Differential Resistance Field Effect Transistor/Charge Injection Transistor) Devices [R] . Kizilyalli, I. C., Hess, K., Higman, T., 1988

机译：实空间转移的集合蒙特卡罗模拟（NERFET /正泰）（负差分电阻场效应晶体管/电荷注入晶体管）器件

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

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