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Multiple-engineering controlled growth of tunable-bandgap perovskite nanowires for high performance photodetectors

机译：用于高性能光电探测器的调谐带隙钙钛矿纳米线的多工程控制生长

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摘要

Controllable growth of perovskite nanowires is very important for various applications in optical and electrical devices. Although significant progress has been achieved in the solution method, a deep understanding of the mechanics of growing perovskite nanowires is still lacking. Herein, we developed an electrochemical method for growing the perovskite nanowires and studied the growth processes systematically. The initial nucleation and crystal growth could be controlled by simply varying the additive solvents, thus leading to two stable size ratio distributions of the perovskite nanowires. Further, with compositional engineering, the bandgap of the perovskites could be tuned from 1.59 eV to 3.04 eV. All the as-grown perovskite nanowires displayed a unique structure with high crystallization quality, contributing to a very high responsivity of 2.1 A W-1 and a large on/off ratio of 5 x 10(3) for the photodetectors based on the CH3NH3PbBr3 nanowires. All of these findings demonstrate that the optimized solution method offers a new approach to synthesize perovskite nanowires for applications in photoelectric devices.
机译：钙钛矿纳米线的可控增长对于光学和电气装置的各种应用非常重要。虽然在解决方案方法中取得了重大进展，但仍然缺乏对生长钙钛矿纳米线的机制的深刻理解。在此，我们开发了一种用于生长钙钛矿纳米线的电化学方法，并系统地研究生长过程。可以通过简单地改变添加剂溶剂来控制初始成核和晶体生长，从而导致钙钛矿纳米线的两个稳定尺寸分布。此外，通过组成工程，钙钛矿的带隙可以从1.59eV调整到3.04eV。所有原样的Perovskite纳米线都显示出具有高结晶质量的独特结构，贡献基于CH3NH3PBBR3纳米线的光电探测器的非常高的响应性为2.1A W-1，以及5×10（3）的大的开/关比。所有这些研究结果表明，优化的解决方案方法提供了一种新方法来合成钙钛矿纳米线以用于光电装置的应用。

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  • 来源
    《RSC Advances》 |2019年第34期|共8页
  • 作者

    Ren Kuankuan; Wang Jian; Liu Kong; Huang Yanbin; Sun Yang; Azam Muhammad; Jin Peng; Wang Zhijie; Qu Shengchun; Wang Zhanguo;

  • 作者单位

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Harbin Inst Technol Res Ctr Ultra Precis Optoelect Instrument Harbin 150080 Heilongjiang Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Harbin Inst Technol Res Ctr Ultra Precis Optoelect Instrument Harbin 150080 Heilongjiang Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing Key Lab Low Dimens Semicond Mat &

    Devices Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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