• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model
【24h】

Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model

机译：偏振针状结构域的形成及其在合成分级铁电薄膜中的不寻常切换：改进的相场模型

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Compositionally graded ferroelectrics (cgFEs), which possess a spatial variation in material composition, exhibit anomalous or even unprecedented properties. Despite several breakthroughs having been achieved in experiments, there surprisingly is a lack of an effective simulation approach for cgFEs, thereby greatly hindering a deep understanding about underlying mechanisms hidden behind the observed phenomena. In this study, an improved phase field model is proposed for a cgFE made of PbZr(1-x)TixO3 based on the Ginzburg-Landau theory. The improved approach enables us to capture several key phenomena occurring in the cgFE PbZr0.8Ti0.2O3 double left right arrow PbZr0.2Ti0.8O3 thin film that are observed from experiments, such as the formation of needle-like domains with curved domain walls, ferroelastic switching under an electric field, and the voltage offset of the hysteresis loop. Results obtained from the improved approach indicate that the high elastic energy near the needle-tip of an a-domain gives rise to a deflection of the domain wall from the regular a/c domain wall, while the high concentration of the depolarization field shrinks a part of the a-domain near the needle-tip and terminates the a-domain within the cgFE thin film. These facilitate the stabilization of needle-like domains with curved domain walls in the cgFE thin film. Furthermore, the flexoelectricity is proven to play an important role in the voltage offset of the hysteresis loop. On the other hand, the ferroelectric switching process in the cgFE thin film exhibits a vastly different response in comparison to that in homogeneous ferroelectric thin films, including local switching initiation and formation and annihilation of vortex-antivortex pairs during the switching. The present study, therefore, provides an incisive approach for investigations on cgFEs, which may bring new understanding and unique insights into these complex materials, as well as novel potential applications.
机译：具有材料组合物的空间变化，具有异常甚至是前所未有的性质的合成渐变的铁电气（CGFE）。尽管实验中已经实现了几次突破，但令人惊讶地缺乏对CGFE的有效模拟方法，从而极大地阻碍了对隐藏在观察到的现象背后隐藏的底层机制的深刻理解。在该研究中，提出了一种改进的相场模型，用于基于Ginzburg-Landau理论的PBZR（1-X）Tixo3制成的CGFE。改进的方法使我们能够捕获从实验中观察到的CGFE PBZR0.8TIO.2O3双左箭头PBZR0.2TI0.8O3薄膜中发生的几个关键现象，例如具有弯曲畴壁的针状畴的形成，在电场下的erroelastic切换，以及滞后环的电压偏移。从改进的方法获得的结果表明，A型域的针尖附近的高弹性能量从常规A / C畴壁上产生畴壁的偏转，而高浓度的去极化场收缩a在针尖附近的A域的一部分，并终止CGFE薄膜内的A结构域。这些有助于在CGFE薄膜中具有弯曲畴壁的针状结构域的稳定性。此外，证明了柔性电性在滞后回路的电压偏移中起重要作用。另一方面，CGFE薄膜中的铁电切换过程与均匀铁电薄膜相比，包括在均匀铁电薄膜中的响应非常不同，包括在切换期间涡旋 - 防触发对的局部切换起始和形成和湮灭。因此，本研究规定了对CGFE的调查的锐利方法，这可能会带来新的理解和独特的见解，以及新的潜在应用。

著录项

  • 来源
    《RSC Advances》 |2019年第13期|共12页
  • 作者

    Le Van Lich; Van-Hai Dinh;

  • 作者单位

    Hanoi Univ Sci &

    Technol Sch Mat Sci &

    Engn 1 Dai Co Viet St Hanoi Vietnam;

    Hanoi Univ Sci &

    Technol Sch Mat Sci &

    Engn 1 Dai Co Viet St Hanoi Vietnam;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号