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Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

机译：薄膜太阳能电池SNS的AA-CVD沉积相纯多晶态的评价

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摘要

Six different thin film solar cells consisting of either orthorhombic (-SnS) or cubic (-SnS) tin(ii) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either -SnS or -SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. -SnS and -SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiOx layer (am-TiOx-FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure -SnS and -SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm(2) were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the -SnS polymorph was achieved with Mo ( = 0.82%) or FTO ( = 0.88%) as the back contacts, with respective open-circuit voltages (V-oc) of 0.135 and 0.144 V, and short-circuit current densities (J(sc)) of 12.96 and 12.78 mA cm(-2). For the devices containing the -SnS polymorph, the highest efficiencies were obtained with the am-TiOx-FTO ( = 0.41%) back contact, with a V-oc of 0.135 V, and J(sc) of 5.40 mA cm(-2). We show that mild post-fabrication hot plate annealing can improve the J(sc), but can in most cases compromise the V-oc. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements.
机译：由正交（-SNS）或立方（-SNS）锡（II）硫化物吸收层组成的六种不同的薄膜太阳能电池已经制造，特征和评估。通过温度控制的气溶胶辅助化学气相沉积（AA-CVD）从单一源前体选择性地沉积-SNS或-SN的吸收层。 - 在钼（Mo），氟掺杂的氧化锡（FTO）上生长-SNS和-SNS层，并涂有薄的无定形TiOx层（AM-TiOx-FTO）的FTO，其显示对此产生显着影响沉积薄膜的生长速率和形态。通过X射线衍射分析（XRD）和拉曼光谱（514.5nm）以相纯-SN和-SNS薄膜为特征。此外，随后使用Cds缓冲层，固有ZnO（I-ZnO）作为绝缘体和氧化铟锡（ITO）作为顶部接触，随后制造一系列具有0.1cm（2）的PV器件。由-SNS多晶型物组成的装置的最高太阳能转换效率，用Mo（= 0.82％）或FTO（= 0.88％）作为背触点，各自的开路电压（V-OC）为0.135和0.144 v，短路电流密度（j（sc））为12.96和12.78 mA cm（-2）。对于包含-SNS多晶型物的器件，使用AM-TiOx-FTO（= 0.41％）背面接触获得最高效率，V-OC为0.135 V，j（sc）为5.40 mA cm（-2 ）。我们表明温和的后制造热板退火可以改善J（SC），但在大多数情况下可以损害V-OC。通过太阳能转换效率和外部量子效率（EQE）测量监测顺序退火的影响。

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  • 来源
    《RSC Advances》 |2019年第26期|共11页
  • 作者

    Ahmet Ibbi Y.; Guc Maxim; Sanchez Yudania; Neuschitzer Markus; Izquierdo-Roca Victor; Saucedo Edgardo; Johnson Andrew L.;

  • 作者单位

    Univ Bath Ctr Sustainable Chem Technol Dept Chem Bath BA2 7AY Avon England;

    Catalonia Inst Energy Res IREC Jardins Dones Negre 1 Pl 2 Barcelona 08930 Spain;

    Catalonia Inst Energy Res IREC Jardins Dones Negre 1 Pl 2 Barcelona 08930 Spain;

    Catalonia Inst Energy Res IREC Jardins Dones Negre 1 Pl 2 Barcelona 08930 Spain;

    Catalonia Inst Energy Res IREC Jardins Dones Negre 1 Pl 2 Barcelona 08930 Spain;

    Catalonia Inst Energy Res IREC Jardins Dones Negre 1 Pl 2 Barcelona 08930 Spain;

    Univ Bath Ctr Sustainable Chem Technol Dept Chem Bath BA2 7AY Avon England;

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  • 正文语种 eng
  • 中图分类 化学;
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