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首页> 外文期刊>RSC Advances >Low-temperature atomic layer deposition of Al2O3/alucone nanolaminates for OLED encapsulation
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Low-temperature atomic layer deposition of Al2O3/alucone nanolaminates for OLED encapsulation

机译：用于OLED包封的Al2O3 /铝酮纳米胺的低温原子层沉积

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摘要

Thin film encapsulation (TFE) is one of the key problems that hinders the lifetime and widespread commercialization of flexible organic light-emitting diodes (OLEDs). In this work, TFE of OLEDs with Al2O3/alucone laminates grown by atomic layer deposition (ALD) and molecular layer deposition (MLD) as moisture barriers were demonstrated. The barrier performances of Al2O3/alucone laminates with respect to the individual layer thickness and the number of dyads were investigated. It was found that alucone with suitable layer thickness could reduce the permeation to the defect zones of the inorganic layer by prolonging the permeation pathway, sequentially improving the moisture barrier performance. The water vapor transmission rate (WVTR) could be further lowered with increasing the number of dyads of the laminates, the WVTR value reached 1.44 x 10(-4) g per m(2) per day for laminates with 5.5 dyads. These laminates were incorporated in OLEDs with pixel define layer (PDL), and were found to be able to evidently prolong the lifetime of the OLED.
机译：薄膜封装（TFE）是阻碍柔性有机发光二极管（OLED）的寿命和广泛商业化的关键问题之一。在这项工作中，通过原子层沉积（ALD）和分子层沉积（MLD）生长的Al 2 O 3 /铝层压物的OLED的TFE作为水分屏障。研究了Al2O3 /铝层叠相对于各个层厚度和二元的数量的阻隔性能。发现具有合适层厚度的亚锡可以通过延长渗透途径来降低对无机层的缺陷区域的渗透，顺序地提高防潮性能。随着层压板的二元的数量，可以进一步降低水蒸气透射率（WVTR），WVTR值每天达到每天为1.44×10（-4）克，用于具有5.5个二元的层压材料。将这些层压板掺入具有像素限定层（PDL）的OLED中，并且发现能够明显地延长OLED的寿命。

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  • 来源
    《RSC Advances》 |2019年第36期|共8页
  • 作者

    Chen Guixiong; Weng Yalian; Sun Fan; Zhou Xiongtu; Wu Chaoxing; Yan Qun; Guo Tailiang; Zhang Yongai;

  • 作者单位

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Coll Phys &

    Informat Engn Fuzhou 350002 Fujian Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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