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首页> 外文期刊>RSC Advances >Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes
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Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

机译：用于无机量子点发光二极管的W掺杂IN2O3透明电极和V2O5空穴注入层之间的界面电子结构

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摘要

The interfacial electronic structure between a W-doped In2O3 (IWO) transparent electrode and a V2O5 hole injection layer (HIL) has been investigated using ultraviolet photoelectron spectroscopy for high-performance and inorganic quantum-dot light-emitting diodes (QLEDs). Based on the interfacial electronic structure measurements, we found gap states in a V2O5 HIL at 1.0 eV below the Fermi level. Holes can be efficiently injected from the IWO electrode into poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4-(4-sec-butylphenyl)diphenylamine)] (TFB) through the gap states of V2O5, which was confirmed by the hole injection characteristics of a hole-only device. Therefore, conventional normal-structured QLEDs were fabricated on a glass substrate with the IWO transparent electrode and V2O5 HIL. The maximum luminance of the device was measured as 9443.5 cd m(-2). Our result suggests that the IWO electrode and V2O5 HIL are a good combination for developing high-performance and inorganic QLEDs.
机译：使用紫外线光电子谱完成用于高性能和无机量子点发光二极管（QLEDS）的W掺杂IN2O3（IWO）透明电极和V2O5空穴注入层（HIL）之间的界面电子结构。 基于界面电子结构测量，我们发现V2O5 HIL的间隙状态在1.0eV下方的FERMI水平下。 通过间隙状态将孔可以从IWO电极从IWO电极注入聚[（9,9-二辛基苯基-2,7-二基）-Co-（4,4-（4-仲丁基苯基）二苯基胺）（TFB）中的孔 V2O5，通过仅孔的空穴装置的空穴注入特性确认。 因此，在具有IWO透明电极和V2O5 HIL的玻璃基板上制造常规的正常结构Q.。 将该装置的最大亮度测量为9443.5cdm（-2）。 我们的结果表明，IWO电极和V2O5 HIL是开发高性能和无机QLED的良好组合。

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  • 来源
    《RSC Advances》 |2019年第21期|共5页
  • 作者

    Heo Su Been; Yu Jong Hun; Kim Minju; Yi Yeonjin; Lee Ji-Eun; Kim Han-Ki; Kang Seong Jun;

  • 作者单位

    Kyung Hee Univ Dept Adv Mat Engn Informat &

    Elect 1732 Deogyeong Daero Yongin 17104 Gyeonggi Do South Korea;

    Kyung Hee Univ Dept Adv Mat Engn Informat &

    Elect 1732 Deogyeong Daero Yongin 17104 Gyeonggi Do South Korea;

    Yonsei Univ Inst Phys &

    Appl Phys 50 Yonsei Ro Seoul 03722 South Korea;

    Yonsei Univ Inst Phys &

    Appl Phys 50 Yonsei Ro Seoul 03722 South Korea;

    Sungkyunkwan Univ Sch Adv Mat &

    Engn 2066 Seobu Ro Suwon 16419 Gyeonggi Do South Korea;

    Sungkyunkwan Univ Sch Adv Mat &

    Engn 2066 Seobu Ro Suwon 16419 Gyeonggi Do South Korea;

    Kyung Hee Univ Dept Adv Mat Engn Informat &

    Elect 1732 Deogyeong Daero Yongin 17104 Gyeonggi Do South Korea;

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  • 正文语种 eng
  • 中图分类 化学;
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