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首页> 外文期刊>RSC Advances >The effect of excess selenium on the opto-electronic properties of Cu2ZnSnSe4 prepared from Cu-Sn alloy precursors
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The effect of excess selenium on the opto-electronic properties of Cu2ZnSnSe4 prepared from Cu-Sn alloy precursors

机译：过量硒对由Cu-Sn合金前体制备的Cu2ZnSnse4的光电性能的影响

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摘要

For the fabrication of a kesterite-type CZTSe absorber material, stacked elemental-alloy layers (SEAL) precursor consisting of Cu-Sn alloy and elemental Zn layers offer the possibility of enhanced process control due to their advantages such as improvement of material homogeneity and suppression of the commonly observed Sn loss. In this study, the impact of selenium amounts during the annealing of a SEAL-type precursor with the configuration of Zn/Cu-Sn/Zn was demonstrated. The obtained results demonstrate how the selenium amount can indirectly be used to influence the absorber composition in the described annealing process and its direct impact on the opto-electronic properties of solar cells. This occurs due to the placement of elemental Sn in the vicinity of the sample during annealing that acts as a further source of SnSe2 vapor during the high-temperature stage of the process depending on the degree of selenium excess. The results show that higher selenium amount increases the band gap of kesterite; this is directly accompanied by a shift of the defect activation energies. Optimization of this effect can lead to widening of the space-charge width up to 400 nm, which improves the charge carrier collection. The described optimization strategy leads to device efficiencies above 11%.
机译：为了制造kesterite型CZTSE吸收材料，由Cu-Sn合金和元素Zn层组成的堆叠元素合金层（密封）前体提供了由于其优点而提高了过程控制的可能性，例如改善材料均匀性和抑制通常观察到的sn损失。在该研究中，证明了硒型前体退火期间硒的影响与Zn / Cu-Sn / Zn的构型。所得结果证明了如何间接地用于影响所描述的退火过程中的吸收剂组合物及其直接影响太阳能电池的光电性质。这是由于在退火期间在样品附近放置元素Sn，其根据在工艺的高温阶段在该过程的高温阶段的进一步来源的进一步来源，这取决于硒的过量程度。结果表明，硒量较高增加了凯特矿石的带隙;这直接伴随着缺陷激活能量的偏移。这种效果的优化可以导致高达400nm的空间电荷宽度扩展，这改善了电荷载体收集。所描述的优化策略导致设备效率高于11％。

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  • 来源
    《RSC Advances》 |2019年第36期|共8页
  • 作者

    Taskesen Teoman; Pareek Devendra; Neerken Janet; Schoneberg Johannes; Hirwa Hippolyte; Nowak David; Parisi Juergen; Guetay Levent;

  • 作者单位

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Energy &

    Semicond Res Lab EHF LCP Carl Von Ossietzky Str 9-11 D-26111 Oldenburg Germany;

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