• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
【24h】

Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode

机译：使用钝化层以改善磷烯/ AZO异质结二极管的热稳定性和质量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Herein, we report the effect of passivation layer composition on thermal stability as measured by Raman spectra of a phosphorene/Al-doped ZnO (AZO) heterostructure. Few-layer phosphorene was formed using micromechanical exfoliation on an AZO film/Si substrate. Samples were passivated by Al2O3, Si3N4, or an Al2O3/Si3N4 stack. Both films were deposited by atomic layer deposition. When these samples were annealed at temperatures in the range from 100 to 550 degrees C, the nitride-only structure was found to have highest thermal sustainability, demonstrating phonon peaks of out-of-plane (A(g)(1)) and in-plane (B-2g and A(g)(2)) modes up to the highest temperature tested (550 degrees C). This was 100 degrees C higher than that for the samples with the conventionally used Al2O3 coating. An oxide/nitride stack permitted anneals up to 500 degrees C. For anneals up to 200 degrees C, the nitride-only passivated phosphorene film was found to have a significant red shift in all the three peaks. This is attributed to the effects of tensile strain. At annealing temperatures higher than 200 degrees C, the spectra blue shifted, attaining values close to the bulk peak position; this suggested strain relaxation in the film at higher temperatures. This relaxation was also evident from a reduction in the full-width at half maximum of the Raman phonon peaks at higher annealing temperatures. Further study suggests that this shift may be due to a reduction in the stress of the passivation layer. The improvement in thermal stability is believed to be due to silicon nitride acting as a diffusion barrier, blocking phosphorus out-diffusion. To demonstrate the utility of higher temperature annealing, a phosphorene/AZO heterojunction diode was fabricated with a Si3N4 passivation layer. The passivated device shows a significant improvement of the diode ideality factor with an increased annealing temperature. The improvement of the diode ideality factor is due to the significant reduction of defect concentration at high annealing temperatures. These findings will promote the development of high-performance phosphorene-based heterojunction devices.
机译：在此，我们通过磷烯/ Al掺杂ZnO（AZO）异质结构的拉曼光谱来报告钝化层组合物对热稳定性的影响。在偶氮膜/ Si衬底上使用微机械剥离形成几层磷烯。样品被Al 2 O 3，Si3N4或Al2O3 / Si3N4堆叠钝化。通过原子层沉积沉积两种薄膜。当这些样品在100至550℃的温度下退火时，发现氮化物的结构具有最高的热可持续性，证明了平面外（a（g）（1））的声子峰值-plane（b-2g和a（g）（2））模式最高到测试的最高温度（550℃）。对于具有常规使用的Al2O3涂层的样品，这是100摄氏度的100℃。氧化物/氮化物叠层允许高达500℃的退火。对于高达200℃的退火，发现仅氮化物的潜在磷烯薄膜在所有三个峰中具有显着的红移。这归因于拉伸应变的影响。在退火温度高于200℃的温度下，光谱蓝移位，达到靠近散装峰位置的值;在较高温度下薄膜中的这种建议的应变松弛。在更高的退火温度下，在拉曼声子峰的半最大值下的全宽度的降低也显而易见的是这种宽度。进一步的研究表明，这种偏移可能是由于钝化层的应力的降低。认为热稳定性的改善是由于作用为扩散屏障的氮化硅，阻挡磷输出扩散。为了证明较高温度退火的效用，用Si3N4钝化层制造磷烯/偶氮异质结二极管。钝化装置显示出具有增加的退火温度的二极管理想因子的显着改善。二极管理想因子的改善是由于高退火温度下的缺陷浓度显着降低。这些发现将促进高性能磷烯类的异质结装置的发展。

著录项

  • 来源
    《RSC Advances》 |2017年第73期|共7页
  • 作者

    Pandey Sushil Kumar; Izquierdo Nezhueyotl; Liptak Rick; Campbell Stephen A.;

  • 作者单位

    Univ Minnesota Dept Elect &

    Comp Engn 200 Union St Minneapolis MN 55455 USA;

    Univ Minnesota Dept Elect &

    Comp Engn 200 Union St Minneapolis MN 55455 USA;

    Rose Hulman Inst Technol Phys &

    Opt Engn 5500 Wabash Ave Terre Haute IN 47803 USA;

    Univ Minnesota Dept Elect &

    Comp Engn 200 Union St Minneapolis MN 55455 USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号