Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor

Melzer Marcel; Nichenametla Charan K.; Georgi Colin; Lang Heinrich; Schulz Stefan E.

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Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor

机译：来自二咔尔酸异丙烷前体的钴氧化物薄膜的低温化学气相沉积

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Cobalt oxides are a promising anode material for lightweight rechargeable lithium-ion batteries. Thus, the low temperature deposition of cobalt oxide is a key-technology for the production of flexible energy storage systems enabling novel application opportunities such as wearables. To satisfy the emerging process requirements the dicobaltatetrahedrane precursor [Co-2(CO)(6)(eta(2)- H-C equivalent to C-(C5H11)-C-n)] was investigated for the low- temperature chemical vapor deposition of cobalt oxides. Oxygen, water vapor and a combination of both were examined as possible co- reactants. In particular, wet oxygen proves to be an appropriate oxidizing agent providing dense and high purity cobalt oxide films within the examined temperature range from 130 degrees C to 250 degrees C. Film growth occurred at temperatures as low as 100 degrees C making this process suitable for the coating of temperature- sensitive and flexible substrates.

机译：氧化钴是用于轻质可再充电锂离子电池的有前途的阳极材料。因此，钴氧化物的低温沉积是用于生产柔性能量存储系统的关键技术，从而实现了诸如可穿戴物的新颖的应用机会。为了满足新出现的工艺要求，研究了二钴酰胺前体[CO-2（共2（CO）（6）（等于C-（C5H11）-CN）]的钴氧化物的低温化学气相沉积。将氧气，水蒸气和两者的组合进行检查，如可能的共反应物。特别地，湿氧被证明是一种适当的氧化剂，其在所检查温度范围内提供致密的和高纯度钴氧化物膜，从130℃至250℃。在低至100摄氏度的温度下发生薄膜生长，使得该方法适用于温度敏感和柔性基材的涂层。

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《RSC Advances》 |2017年第79期|共10页
作者
Melzer Marcel; Nichenametla Charan K.; Georgi Colin; Lang Heinrich; Schulz Stefan E.;
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Tech Univ Chemnitz Ctr Microtechnol D-09126 Chemnitz Germany;

Tech Univ Chemnitz Ctr Microtechnol D-09126 Chemnitz Germany;

Fraunhofer Inst Elect Nanosyst Dept Back End Line Technol Campus 3 D-09126 Chemnitz Germany;

Tech Univ Chemnitz Inst Chem Inorgan Chem D-09107 Chemnitz Germany;

Tech Univ Chemnitz Ctr Microtechnol D-09126 Chemnitz Germany;

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正文语种 eng
中图分类化学;
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1. Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor [J] . Melzer Marcel, Nichenametla Charan K., Georgi Colin, RSC Advances . 2017,第79期

机译：来自二咔尔酸异丙烷前体的钴氧化物薄膜的低温化学气相沉积
2. Cobalt(I) Olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films [J] . Hamilton Jeff A., Pugh Thomas, Johnson Andrew L., Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics . 2016,第14期

机译：钴（I）烯烃配合物：高纯度钴金属薄膜的金属有机化学气相沉积的前体
3. CHEMICAL VAPOR DEPOSITION PRECURSOR CHEMISTRY .5. THE PHOTOLYTIC LASER DEPOSITION OF ALUMINUM THIN FILMS BY CHEMICAL VAPOR DEPOSITION [J] . Glass JA., Datta S., Robertson B., The journal of physics and chemistry of solids . 1996,第5期

机译：化学气相沉积前驱体化学.5。化学气相沉积对铝薄膜的光解激光沉积
4. Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate [C] . A.U. Mane, K. Shalini, S.A. Shivashankar, European conference on chemical vapor deposition . 2001

机译：通过丙酸钴的金属化学气相沉积制备的氧化钴薄膜
5. Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization. [D] . Edleman, Nikki Lynn. 2002

机译：氧化铈，氧化镓铟和氧化镁薄膜的金属有机化学气相沉积：前体设计，膜生长和膜表征。
6. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition [O] . P. Haniam, C. Kunsombat, S. Chiangga, -1

机译：激光化学气相沉积法合成氧化钴薄膜的分形结构
7. Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor [O] . Melzer, M., Nichenametla, Charan K., Georgi, Colin, 2017

机译：从二碳酸铜合物前体低温化学气相沉积氧化钴薄膜

Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor

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