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Microstructure and electric properties of BCZT thin films with seed layers

机译：BCZT薄膜与种子层的微观结构和电性能

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摘要

Lead free Ba0.99Ca0.01Ti0.98Zr0.02O3 (BCZT) thin films with seed layers were prepared by using sol-gel processing technique. The seed layers, ranging from 10 nm to 40 nm, were introduced between the BCZT films and the Pt(111)/Ti/SiO2/Si substrates. The effects of seed layer thickness on the structure and dielectric properties of the thin films were investigated. With the increase of seed layer thickness, the grain size of the BCZT thin films increases from about 100 nm to 300 nm, accordingly, the dielectric constants decrease at lower frequency. The highest dielectric tunability is 34.5% for the films with a 20 nm-thick seed layer. Improved effective piezoelectric coefficients (d(33)) were observed in the BCZT thin films. The maximum d33 value of BCZT thin films with a 30 nm-thick seed layer is approximately 70 pm V-1, which is comparable to that of polycrystalline PZT thin films. The seed layer thickness dependence of the electric properties is attributed to the dipole polarization. This demonstrated the possibility to control the microstructure and improve properties of BCZT thin films, which could be exploited for functional devices that demand high quality.
机译：通过使用溶胶 - 凝胶加工技术制备具有种子层的无铅Ba0.99ca0.01ti0.98zr0.02O3（Bczt）薄膜。在BCZT薄膜和Pt（111）/ Ti / SiO 2 / Si衬底之间引入从10nm至40nm的种子层。研究了种子层厚度对薄膜的结构和介电性质的影响。随着种子层厚度的增加，BCZT薄膜的晶粒尺寸从约100nm至300nm增加，相应地，介电常数在较低频率下降。对于具有20nm厚的种子层的薄膜，介电可调性最高为34.5％。在BCZT薄膜中观察到改进的有效压电系数（D（33））。具有30nm厚的种子层的BCZT薄膜的最大D33值为约70μmV-1，其与多晶PZT薄膜相当。电性能的种子层厚度依赖性归因于偶极偏振。这证明了控制微观结构和改善BCZT薄膜的性能，这可以利用要求高质量的功能装置。

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  • 来源
    《RSC Advances》 |2017年第79期|共7页
  • 作者

    Jiang Xin; Wang Dan; Sun Mingze; Zheng Ningjing; Jia Shengwei; Liu Huanhuan; Zhang Dongxu; Li Wei;

  • 作者单位

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

    Liaocheng Univ Sch Mat Sci &

    Engn Liaocheng 252059 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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