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Exposure enhanced photoluminescence of CdS0.9Se0.1 quantum dots embedded in spin-coated Ge25S75 thin films

机译:曝光增强了Cds0.9se0.1的光致发光嵌入旋转涂层GE25S75薄膜中的量子点

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摘要

Semiconductor quantum dots (QDs) are well known photoluminescent materials. Their potential practical applications depend on their physico-chemical and luminescent properties and also on the properties of hosting material. To ensure that QDs retain their photoluminescence during the preparation of a suitable solid composite form, the solution based casting techniques with deposition at lower temperatures are usually used. In our work, we have doped an inorganic Ge25S75 chalcogenide glass matrix with synthesized CdS0.9Se0.1 QDs and prepared thin films by the solution based spin-coating technique. In comparison with commonly used polymers the Ge25S75 chalcogenide glass thin films a possess high refractive index and wide VIS-NIR-MIR optical transparent region. We also report on the phenomenon of significant UV exposure induced increase of doped thin film photoluminescence intensity which can be exploited in local photo-induced photoluminescence enhancement of doped chalcogenide glass thin films.
机译:半导体量子点(QDS)是已知的光致发光材料。它们的潜在实际应用取决于其物理化学和发光性能,以及托管材料的性质。为了确保在制备合适的固体复合形式期间QDS保持其光致发光,通常使用溶液在较低温度下的沉积液的溶液。在我们的工作中,我们掺杂了一种无机GE25S75硫属化物玻璃基质,其具有合成的CdS0.9Se0.1QD和通过基于溶液的旋涂技术制备的薄膜。与常用的聚合物相比,GE25S75硫属化物玻璃薄膜A具有高折射率和宽的Vis-Nir-miR光学透明区域。我们还报告了显着的紫外线暴露诱导的掺杂薄膜光致发光强度升高的现象,这可以利用局部光致发光的掺杂硫族化物玻璃薄膜的光致发光增强。

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  • 来源
    《RSC Advances》 |2017年第85期|共9页
  • 作者单位

    Univ Pardubice Fac Chem Technol Ctr Mat &

    Nanotechnol Pardubice 53210 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat &

    Nanotechnol Pardubice 53210 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat &

    Nanotechnol Pardubice 53210 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat &

    Nanotechnol Pardubice 53210 Czech Republic;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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