Hybrid III-V-on-SOI optical spot size converter by self-aligned selective undercut dry etching of Si

Chen Yang-Jeng; Chen Rin-You; Fang Yi-Hsin; Liang Che-Hsin; Hsu Wen-Kuan; Chen Cong-Long; Lin Wei-Chen; Weng Chen-Yu; Chu Jyun-Ye; Chiu Yi-Jen

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Hybrid III-V-on-SOI optical spot size converter by self-aligned selective undercut dry etching of Si

机译：通过自对准选择性底切蚀刻SI的混合III-V-ON-SOI光斑尺寸转换器

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A technology called self-aligned selective undercut dry etching processing has been demonstrated for fabricating a highly efficient hybrid optical spot size converter (SSC) on a Si-on-insulator (SOI) template. The process was based on a bonded wafer between the upper InP-based multiple quantum well heterostructure and the lower SOI substrate. After defining the mask on the upper InP-based ridge waveguide, CF4/O-2 dry reactive ion etching was then used for selective undercut etching of the Si material from the surrounding materials, forming a vertical waveguide coupler of the optical SSC. The lower waveguide, whose dimension is even smaller than the upper one, can thus be vertically self-aligned to the top ridge via an independent processing step. A laterally tapered waveguide ranging from 0.3 to 3 IAM in width on the upper InP waveguide was fabricated. The phase-matching condition of the vertical coupler leads to a length of45 IAM and extracts 88% conversion efficiency. The selective undercut etching processing in IH-V/SOI material provides a vertical self-alignment scheme for realizing compact and submicron scale heterogeneous integration in a Si photonics template. (C) 2020 Optical Society of America

机译：已经证明了一种称为自对准选择性底切干蚀刻处理的技术，用于在Si-on绝缘体（SOI）模板上制造高效的混合光斑尺寸转换器（SSC）。该过程基于基于UNP的多量子阱异质结构和下SOI衬底之间的键合晶片。在将掩模定义在基于INP的脊波导上之后，然后将CF4 / O-2干反应离子蚀刻用于从周围材料的选择性底切蚀刻，形成光学SSC的垂直波导耦合器。因此，其尺寸甚至小于上部的较低波导，因此可以通过独立的处理步骤垂直地自对准顶部脊。制造在上部INP波导上的0.3至3 IAM的横向锥形波导范围内的横向锥形波导。垂直耦合器的相位匹配条件导致45 IAM的长度，提取88％的转换效率。 IH-V / SOI材料中的选择性底切蚀刻处理提供了一种用于实现Si光子模板中的紧凑和亚微米级异构集成的垂直自对准方案。（c）2020美国光学学会

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来源
《Optics Letters》 |2020年第15期|共4页
作者
Chen Yang-Jeng; Chen Rin-You; Fang Yi-Hsin; Liang Che-Hsin; Hsu Wen-Kuan; Chen Cong-Long; Lin Wei-Chen; Weng Chen-Yu; Chu Jyun-Ye; Chiu Yi-Jen;
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Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;

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正文语种 eng
中图分类计量学;光学;
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专利

1. Hybrid III-V-on-SOI optical spot size converter by self-aligned selective undercut dry etching of Si [J] . Chen Yang-Jeng, Chen Rin-You, Fang Yi-Hsin, Optics Letters . 2020,第15期

机译：通过自对准选择性底切蚀刻SI的混合III-V-ON-SOI光斑尺寸转换器
2. A 1.55-μm Hybrid Integrated Wavelength-Converter Module Using Spot-Size Converter Integrated Semiconductor Optical Amplifiers on a Planar-Lightwave- Circuit Platform [J] . Rieko SATO, Yasuhiro SUZUKI, Naoto YOSHIMOTO IEICE Transactions on Communications . 1999,第8期

机译：在平面光波电路平台上使用光点大小转换器集成半导体光放大器的1.55μm混合集成波长转换器模块
3. High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth [J] . Hajime Shoji, Hideki Yagi, Katsumi Uesaka, IEICE Electronics Express . 2015,第2期

机译：基于InP的Pin-光电二极管阵列与90°混合和点尺寸转换器集成在一起的高接收器响应度和低暗电流，采用选择性嵌入再生长
4. Tapered Undercut-Etching-Active-Region for Integrating Spot-Size Converter and Electroabsorption Modulator [C] . Lin Fang-Zheng, Tsai Shun-An, Wu Tsu-Hsiu, Conference on Optoelectronic and Microelectronic Materials Devices . 2006

机译：用于集成点尺寸转换器和电吸收调制器的锥形底切蚀刻 - 主动区域
5. Optical channel waveguide formation by focused ion beam induced selective mixing and wet chemical etching: Design, fabrication and characterization. [D] . Kumar, Mukesh. 1997

机译：通过聚焦离子束诱导的选择性混合和湿法化学蚀刻形成光通道波导：设计，制造和表征。
6. A compact silicon grating coupler based on hollow tapered spot-size converter [O] . Md Asaduzzaman, Masuduzzaman Bakaul, Efstratios Skafidas, -1

机译：基于空心锥形点尺寸转换器的紧凑型硅光栅耦合器
7. Fabrication and optical optimization of spot-size converters with strong cladding layers [O] . Liu Y, Li Y, Fan ZC, 2009

机译：具有坚固覆层的光斑尺寸转换器的制造和光学优化
8. Selective Photochemical Dry Etching of Compound Semiconductors: Enhanced Control Through Secondary Electronic Properties. [R] . Ashby, C. I. H. 1988

机译：化合物半导体的选择性光化学干法蚀刻：通过二次电子特性的增强控制。

Hybrid III-V-on-SOI optical spot size converter by self-aligned selective undercut dry etching of Si

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