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Substrate-induced electronic localization in monolayer MoS2 measured via terahertz spectroscopy

机译：通过太赫兹光谱测量的单层MOS2中的基板诱导的电子定位

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摘要

We study terahertz (THz) optoelectronic properties of monolayer (ML) MoS2 placed on different substrates such as SiO2/Si, sapphire, and quartz. Through the measurements of THz Fourier transform spectroscopy (2.5-6.5 THz) and THz time-domain spectroscopy (TDS, 0.2-1.2 THz), we find that the real part of optical conductivity increases for ML MoS2 on SiO2/Si and sapphire substrates and decreases for it on quartz with increasing radiation frequency. It is shown that the complex optical conductivity for ML MoS2, obtained from THz TDS measurements, can fit very well to the Drude-Smith formula. Thus, the dependence of optical conductivity of ML MoS2 on different substrates can be understood via a mechanism of electronic localization, and the electron density, relaxation time, and localization factor of the sample can be determined optically. Furthermore, we examine the influence of temperature on these key parameters in ML MoS2 on different substrates. The results obtained from this Letter indicate that THz spectroscopy is a very powerful tool in studying and characterizing ML MoS2-based electronic systems, especially in examining the electronic localization effect which cannot be directly measured in conventional electrical transport experiment. This Letter is relevant to an in-depth understanding of the optoelectronic properties of ML MoS2 and of the proximity effect induced by different substrates. (C) 2019 Optical Society of America
机译：我们研究了单层（ML）MOS2的Terahertz（THz）光电性质，其放置在不同的基材上，例如SiO2 / Si，蓝宝石和石英。通过测量THz傅里叶变换光谱（2.5-6.5THz）和THz时域光谱（TDS，0.2-1.2 ZHz），发现光学电导率的实部增加到SiO2 / Si和蓝宝石基板上的ML MOS2和随着辐射频率的增加，在石英上为它减少。结果表明，ML MOS2的复合光学电导率从TMS测量中获得的ML MOS2可以非常适合于Drude-Smith公式。因此，可以通过电子定位机制理解，通过电子定位的机制理解光导率ML MOS2对不同基板的依赖性，以及样品的电子密度，弛豫时间和定位因子可以光学地确定。此外，我们研究了在不同基板上的ML MOS2中这些关键参数的影响。从该字母获得的结果表明，THz光谱是研究和表征基于ML MOS2的电子系统的一种非常强大的工具，特别是在检查不能直接在传统电气传输实验中直接测量的电子定位效果。这封信与对M1 MOS2的光电性质和由不同基材引起的接近效果的深入理解有关。 （c）2019年光学学会

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  • 来源
    《Optics Letters》 |2019年第17期|共4页
  • 作者

    Wang Chao; Xu Wen; Mei Hongying; Qin Hua; Zhao Xinnian; Zhang Chao; Yuan Haifeng; Zhang Jin; Xu Yong; Li Peng; Li Ming;

  • 作者单位

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Anhui Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Anhui Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Anhui Peoples R China;

    Chinese Acad Sci Suzhou Inst Nanotech &

    Nanobion Key Lab Nanodevices &

    Applicat Suzhou 215123 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Anhui Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Anhui Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Anhui Peoples R China;

    Yunnan Univ Sch Phys &

    Astron Kunming 650091 Yunnan Peoples R China;

    China Acad Engn Phys Inst Appl Elect Mianyang 621900 Sichuan Peoples R China;

    China Acad Engn Phys Inst Appl Elect Mianyang 621900 Sichuan Peoples R China;

    China Acad Engn Phys Inst Appl Elect Mianyang 621900 Sichuan Peoples R China;

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  • 正文语种 eng
  • 中图分类 计量学;光学;
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