Electrically pumped 1.5 mu m InP-based quantum dot microring lasers directly grown on (001) Si

Zhu Si; Shi Bei; Lau Kei May

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Electrically pumped 1.5 mu m InP-based quantum dot microring lasers directly grown on (001) Si

机译：电动泵送1.5μMINP的量子点微型光环直接生长（001）Si

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Directly grown quantum dot (QD) lasers on silicon are appealing for monolithic integration of photonic circuits from a technoeconomic perspective. In this Letter, we report miniaturization of these Si-based lasers employing high-quality whispering-gallery mode microresonators. Based on previously developed InAs/InAlGaAs QDs on the complementary metal-oxide-semiconductor-standard (001) Si platform and optimized device implementation techniques, on-chip electrically pumped InP-based QD microring lasers (MRLs) on Si are successfully realized for the first time. Room-temperature pulsed lasing in the 1.5 mu m wavelength band, with a threshold of 50 mA, is measured for 50-mu m-diameter MRLs. Lasing up to 70 degrees C is achieved with a characteristic temperature of 51.5 K. (C) 2019 Optical Society of America

机译：硅上的直接成长量子点（QD）激光器是从技术经济角度来看光子电路的单片集成。在这封信中，我们报告了采用高质量潜水画廊模式微谐振器的这些基于SI的激光器的小型化。基于互补金属 - 氧化物半导体标准（001）Si平台上的先前开发的InAs / Inalgaas QDS和优化的器件实现技术，Si上的片上电泵基的基于QD微管激光激光器（MRLS）被成功实现了第一次。室温脉冲在1.5 mu m波长带中的脉冲，测量50 mA的阈值，测量50-mu m直径的MRL。通过51.5 k的特征温度实现高达70℃的C.（c）2019年光学学会

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来源
《Optics Letters》 |2019年第18期|共4页
作者
Zhu Si; Shi Bei; Lau Kei May;
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作者单位

Hong Kong Univ Sci &

Technol Dept Elect &

Comp Engn Kowloon Clear Water Bay Hong Kong Peoples R China;

Hong Kong Univ Sci &

Technol Dept Elect &

Comp Engn Kowloon Clear Water Bay Hong Kong Peoples R China;

Hong Kong Univ Sci &

Technol Dept Elect &

Comp Engn Kowloon Clear Water Bay Hong Kong Peoples R China;

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正文语种 eng
中图分类计量学;光学;
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1. Electrically pumped 1.5 mu m InP-based quantum dot microring lasers directly grown on (001) Si [J] . Zhu Si, Shi Bei, Lau Kei May Optics Letters . 2019,第18期

机译：电动泵送1.5μMINP的量子点微型光环直接生长（001）Si
2. Optically pumped 1.3 mu m room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon [J] . Wan Yating, Li Qiang, Liu Alan Y., Optics Letters . 2016,第7期

机译：直接生长在（001）硅上的光泵浦1.3μm室温InAs量子点微盘激光器
3. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon [J] . Zhu Si, Shi Bei, Li Qiang, Applied Physics Letters . 2018,第22期

机译：直接在CMOS标准（001）硅上生长的1.5μm量子点二极管激光器
4. Room-Temperature Electrically Pumped InP-based $1.3oldsymbol{mu} mathbf{m}$ Quantum Dot Laser on on-axis (001) Silicon [C] . Wei Luo, Ying Xue, Bei Shi, Compound Semiconductor Week . 2019

机译：室温电泵浦基于InP的 $ 1.3 boldsymbol { mu} mathbf {m} $ 同轴量子点激光器（001）硅
5. Short-wavelength indium aluminum gallium phosphide quantum well lasers and indium phosphide quantum dot coupled to strained indium aluminum gallium phosphide quantum well lasers grown by MOCVD [D] . Heller, Richard Dean, Jr. 2003

机译：短波长铟铝镓磷化镁井激光器和磷化铟量子点耦合到应变铟铝镓磷化钯量子孔孔孔，由MOCVD种植
6. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si [O] . Yi Sun, Kun Zhou, Meixin Feng, 2018

机译：直接在Si上生长的室温连续波电泵浦InGaN / GaN量子阱蓝色激光二极管
7. 1.5μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon [O] . Si Zhu, Bei Shi, Qiang Li, 2018

机译：1.5μm量子点二极管激光直接在CMOS标准（001）硅上生长

Electrically pumped 1.5 mu m InP-based quantum dot microring lasers directly grown on (001) Si

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