Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing

Castelletto S.; Almutairi A. F. M.; Kumagai K.; Katkus T.; Hayasaki Y.; Johnson B. C.; Juomos S.

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Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing

机译：通过直接飞秒激光写入六边形碳化硅的光致发光

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Direct femtosecond laser writing has been used to produce localized regions of photo-luminescent emission in 4H- and 6H-silicon carbide (SiC). Arrays of active color centers were fabricated by different pulse laser energies in the sites of square grids at various depths (from surface level to 10 mu m below surface). We optically characterized the fabricated color centers using confocal imaging with 532 and 780 nm excitation, photo-luminescence spectroscopy, and lifetime decay at room temperature. We show that the technique can produce specifically the silicon vacancy color center emitting in the range 850-950 nm and other emitters in the 700 nm. This method can be adopted to engineer color centers in (SiC) at different depths in the material for single-photon generation, sensing, display fabrication, and light emitting diodes. (c) 2018 Optical Society of America

机译：直接飞秒激光书写已被用于在4H-和6H-碳化硅（SIC）中产生光发光发射的局部区域。通过各种深度的方形网格位点（从表面水平到表面以下）的不同脉冲激光能量，通过不同的脉冲激光能量来制造。我们使用具有532和780nm激发的共聚焦成像，光发光光谱和室温下的寿命衰减光学表征制造的颜色中心。我们表明，该技术可以特别生产硅空位色点，在700nm的850-950nm和其他发射器的范围内发出。该方法可以在用于单光子发电，感测，显示制造和发光二极管的材料中的不同深度的（SiC）中的工程彩色中心。（c）2018年光学学会

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《Optics Letters》 |2018年第24期|共4页
作者
Castelletto S.; Almutairi A. F. M.; Kumagai K.; Katkus T.; Hayasaki Y.; Johnson B. C.; Juomos S.;
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RMIT Univ Sch Engn Melbourne Vic 3000 Australia;

RMIT Univ Sch Engn Melbourne Vic 3000 Australia;

Swinburne Univ Technol Swinbume Nanotechnol Facil Hawthorn Vic 3122 Australia;

Swinburne Univ Technol Swinbume Nanotechnol Facil Hawthorn Vic 3122 Australia;

Utsunomiya Univ Ctr Opt Res &

Educ 7-1-2 Yoto Utsunomiya Tochigi Japan;

Univ Melbourne Sch Phys Ctr Quantum Computat &

Commun Technol Melbourne Vic 3001 Australia;

Swinburne Univ Technol Swinbume Nanotechnol Facil Hawthorn Vic 3122 Australia;

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正文语种 eng
中图分类计量学;光学;
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专利

1. Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing [J] . Castelletto S., Almutairi A. F. M., Kumagai K., Optics Letters . 2018,第24期

机译：通过直接飞秒激光写入六边形碳化硅的光致发光
2. Modeling ultrafast out-of-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal silicon carbide with femtosecond laser pulses [J] . Physical review, B . 2020,第7期

机译：用飞秒激光脉冲辐射六边形碳化硅辐射超越平衡载体动力学和弛豫过程
3. Femtosecond laser direct writing of monocrystalline hexagonal silver prisms [J] . Kevin Vora, SeungYeon Kang, Michael Moebius, Applied Physics Letters . 2014,第14期

机译：飞秒激光直接写入单晶六角形银棱镜
4. Silicon microholes array fabricated by femtosecond laser pulses directly writing assisted with further electrochemical etching [C] . Zhongyi Guo Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE . 2011

机译：飞秒激光脉冲直接写入辅助的硅微孔阵列，进一步进行电化学蚀刻
5. Femtosecond laser direct writing of silicon nanowires. [D] . Mitchell, James Isaac. 2010

机译：飞秒激光直接写入硅纳米线。
6. Femtosecond Laser-Based Modification of PDMS to Electrically Conductive Silicon Carbide [O] . Yasutaka Nakajima, Shuichiro Hayashi, Akito Katayama, 2018

机译：飞秒激光将PDMS改性为导电碳化硅
7. Femtosecond Laser Writing: Femtosecond Laser Direct Writing of Plasmonic Ag/Pd Alloy Nanostructures Enables Flexible Integration of Robust SERS Substrates (Adv. Mater. Technol. 6/2017) [O] . Zhuo-Chen Ma, Yong-Lai Zhang, Bing Han, 2017

机译：Femtosecond激光书写：Plasmonic Ag / Pd合金纳米结构的飞秒激光直接写入能够灵活地集成强大的Sers基材（ADV。Mater。Technol.6 / 2017）

Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing

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