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首页> 外文期刊>Optics Letters >UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections
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UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections

机译：具有增强的电子和空穴注入的Si衬底上生长的UVA发光二极管

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摘要

In this work, III-nitride based similar to 370 nm UVA lightemitting diodes (LEDs) grown on Si substrates are demonstrated. We also reveal the impact of the AlN composition in the AlGaN quantum barrier on the carrier injection for the studied LEDs. We find that, by properly increasing the AlN composition, both the electron and hole concentrations in the multiple quantum wells (MQWs) are enhanced. We attribute the increased electron concentration to the better electron confinement within the MQW region when increasing the AlN composition for the AlGaN barrier. The improved hole concentration in the MQW region is ascribed to the reduced hole blocking effect by the p-type electron blocking layer (p-EBL). This is enabled by the reduced density of the polarization-induced positive charges at the AlGaN last quantum barrier (LB)/p-EBL interface, which correspondingly suppresses the hole depletion at the AlGaN LB/p-EBL interface and decreases the valence band barrier height for the p-EBL. As a result, the optical power is improved. (C) 2017 Optical Society of America
机译：在这项工作中，证明了在Si衬底上生长的类似于370nm的uva发光二极管（LED）的III-氮化物。我们还揭示了Aln组合物在研究的载体喷射器上的AlGaN量子屏障中的影响。我们发现，通过适当地增加ALN组合物，可以增强多量子阱（MQW）中的电子和空穴浓度。当增加AlGAN屏障的ALN组合物时，我们将增加的电子浓度归因于MQW区域的更好的电子限制。 MQW区域中的改进的空穴浓度由p型电子阻挡层（P-EBL）归因于降孔阻塞效果。这通过ALGAN最后量子屏障（LB）/ P-EBL界面处的偏振引起的正电荷的密度降低，这相应地抑制了ALGAN LB / P-EBL界面处的孔耗尽并减少了价带屏障P-EBL的高度。结果，改善了光功率。 （c）2017年光学学会

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  • 来源
    《Optics Letters》 |2017年第21期|共4页
  • 作者

    Zhang Zi-Hui; Chu Chunshuang; Chiu Ching Hsueh; Lu Tien Chang; Li Luping; Zhang Yonghui; Tian Kangkai; Fang Mengqian; Sun Qian; Kuo Hao-Chung; Bi Wengang;

  • 作者单位

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

    Chinese Acad Sci Suzhou Inst Nanotech &

    Nanobion SINANO Key Lab Nanodevices &

    Applicat Suzhou 215123 Peoples R China;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan;

    Hebei Univ Technol Key Lab Elect Mat &

    Devices Tianjin Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tech 5340 Xiping Rd Tianjin 300401 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
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