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机译:改善了ALN基板上单层MOS2的可见光吸光度及其角度依赖电子结构
Linyi Univ State Owned Assets &
Lab Management Linyi 276000 Peoples R China;
Linyi Univ Inst Condensed Matter Phys Sch Phys &
Elect Engn Linyi 276000 Peoples R China;
Linyi Univ Inst Condensed Matter Phys Sch Phys &
Elect Engn Linyi 276000 Peoples R China;
Linyi Univ Inst Condensed Matter Phys Sch Phys &
Elect Engn Linyi 276000 Peoples R China;
Linyi Univ Inst Condensed Matter Phys Sch Phys &
Elect Engn Linyi 276000 Peoples R China;
Linyi Univ Inst Condensed Matter Phys Sch Phys &
Elect Engn Linyi 276000 Peoples R China;
Linyi Univ Inst Condensed Matter Phys Sch Phys &
Elect Engn Linyi 276000 Peoples R China;
机译:改善了ALN基板上单层MOS2的可见光吸光度及其角度依赖电子结构
机译:布拉格堆叠中单层MoS2和超材料结构作为宽带吸收剂的利用
机译:DFT技术对块状MoS2及其单层电子性能的比较研究:机械应变在MoS2单层上的应用
机译:单轴应变对单层MoS2电子结构的影响
机译:电子带结构影响单层,双层和杂化石墨烯结构。
机译:锗/ MoS2单层和硅/ MoS2单层超晶格的结构和电子性质
机译:锗/ MoS2单层和硅/ MoS2单层超晶格的结构和电子性质