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首页> 外文期刊>Physica status solidi, B. Basic research >X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface
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X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface

机译：X射线反射率法，用于表征Ingan / GaN量子阱界面

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摘要

A method to characterize the interface of InGaN/GaN quantum wells by X-ray reflectivity is presented. The interface roughness can be obtained from the ratio of diffuse to specular scatterings obtained on a transverse omega-scan. Rotation around the azimuthal phi angle allows for information about the directionality of the roughening mechanisms to be obtained. The method allows for quick identification of the presence or absence of gross well width fluctuations in the quantum well, providing that the interface is chemically sharp. When the interface exhibits chemical grading, compositional fluctuations across the terraced structure of the quantum well surface lead to aggravated roughness as the barrier is grown, which may be misinterpreted as gross well width fluctuations. This method carries promises for complementing analysis by transmission electron microscopy as it is non-destructive, fast, and allows multi-directional characterization of the roughness. It would therefore be particularly useful to detect process deviation in a production line, where prior knowledge of the sample is already available. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译：介绍了X射线反射率的表征Ingan / GaN量子阱界面的界面的方法。界面粗糙度可以从在横向ω-扫描上获得的散射与镜面散射的比率获得。围绕方位角PHI角度的旋转允许有关要获得的粗糙机构的方向性的信息。该方法允许快速识别量子井中粗糙宽度波动的存在或不存在，从而提供界面在化学上尖锐。当界面表现出化学分级时，随着屏障的生长而导致量子阱表面的梯形结构的露天结构的组成波动导致加重粗糙度，这可能被误解为粗糙的宽度波动。该方法承载有望通过透射电子显微镜进行补充分析，因为它是非破坏性的，快速的，并且允许粗糙度的多向表征。因此，在生产线中检测过程偏差将特别有用，其中已经可用了样本的先验知识。 （c）2017 Wiley-VCH Verlag GmbH＆Co.Kgaa，Weinheim

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