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首页> 外文期刊>Physica, B. Condensed Matter >Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures
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Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures

机译：金属界面层半导体（MIS）型结构中电和电介质特性的频率和电压依赖性

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Zinc-ferrite nanostructures were fabricated using ultrasonic-assisted-method. FE-SEM, EDX and XRD were utilized for the investigation of morphological and structural properties. Au/(ZnFe2O4-PVP)/n-Si MPS structures were prepared for the purpose of characterizing electrical and dielectric properties via impedance-spectroscopymethod (ISM) between -2 V and 5 V in the frequency range of 10 kHz-5MHz. The frequency-dependent values of electrical parameters such as V-D, N-D, E-F, W-D and Phi(C-V) were extracted from the reverse bias C-2-V. Voltagede-pendent profiles of R-s and N-ss was calculated using Nicollian-Brews and high-low frequency capacitance (C-LF -C-HF) methods. Results showed N-ss is more effective are depletion and inversion whereas accumulation region is the region at which R-s is more effective. The real and imaginary parts of epsilon* and M* were calculated and showed strong dependence on frequency and voltage. The higher values of C, G/omega or epsilon', epsilon '' at low frequencies and observed peak in the M ''-V and (tan delta)-V were associated with N-ss.
机译：使用超声波辅助方法制造锌 - 铁氧体纳米结构。 FE-SEM，EDX和XRD用于调查形态学和结构性。制备Au /（ZnFe2O4-PVP）/ N-Si MPS结构，用于通过在10kHz-5MHz的频率范围内通过-2V和5V的阻抗光谱（ISM）来表征电气和介电性能。从反向偏压C-2-V中提取诸如V-D，N-D，E-F，W-D和PHI（C-V）的频率依赖性值。使用Nicollian-Brews和高低频率电容（C-LF-HF）方法计算R-S和N-S的电压型材。结果表明，N-SS更有效地耗尽和反转，而累积区域是R-S更有效的区域。计算ε*和M *的真实和虚部，并显示出强烈依赖频率和电压。在低频下的C，G / Omega或epsilon'，ε'ε''在M''-V和（TaN delta）-V中观察到的峰值越高，与N-SS相关联。

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