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首页> 外文期刊>Physica, B. Condensed Matter >Polarization switching in undoped and La-doped TlInS 2 ferroelectric-semiconductors
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Polarization switching in undoped and La-doped TlInS 2 ferroelectric-semiconductors

机译:未掺杂和La-Doped Tlins的偏振切换 2 铁电半导体

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AbstractDielectric hysteresis loops of pure and lanthanum doped TlInS2ferroelectric-semiconductors were studied at the frequency 50Hz for different temperatures below the Curie temperature (Tc). It has been revealed that, without any poling procedure, pure TlInS2exhibits normal single hysteresis loops atT/mml:mo>Tc. After electric field-cooled treatment of TlInS2the shape of hysteresis loops was strongly affected by corresponding charged deep level defects which were previously activated during the poling process. As a result, an additional defect polarization state from space charges accumulated on the intrinsic deep level defects has been revealed in pure TlInS2at the temperatures belowTc. Besides, unusual multiple hysteresis loops were observed in La doped TlInS2at
机译:<![cdata [ 抽象 纯和镧掺杂TLINS的介电滞后环 2 铁电半导体在50Hz的频率下研究,以进行静脉温度以下的不同温度( t c )。据透露,没有任何抛音程序,纯TLINS 2 t / mml:mo> t C TlInS的电场冷却处理后2 磁滞回线的形状的强烈影响相应的带电,其在极化过程中被预先活化深能级的缺陷。结果,在纯TLINS中累积的空间电荷的附加缺陷偏振状态已经在纯的TLINS 2 在低于 Ť C 。此外,在La掺杂Tlins 2 AT AT

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