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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Thermodynamic Stability of Gold-Assisted InAs Nanowire Growth
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Thermodynamic Stability of Gold-Assisted InAs Nanowire Growth

机译：金辅助INAS纳米线生长的热力学稳定性

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Growth of III-V semiconductor nanowires, is generally assisted by a liquid particle in order to get a highly anisotropic crystallization. The thermodynamic stability of the particle is therefore of importance for control and understanding of the nanowire growth process. In this report we explore the particle stability by manipulating its properties, specifically its surface tension and volume, by accumulating indium in the particle during nanowire growth. We demonstrate a droplet displacement, from the top to one of the nanowire side facets, when exceeding the stability limit for a gold particle wetting an [0001]-oriented InAs nanowire. This particle displacement is attributed to a lowered surface tension and a truncation of the top facet. In addition, our results indicate reversibility of the displacement, showing that the (111/0001) facet is the most favorable for a droplet to wet during common growth conditions. The stability condition for InAs growth is determined experimentally, and the understanding developed can easily be applied to other III-V nanowires.
机译：III-V半导体纳米线的生长通常通过液体颗粒辅助，以获得高度各向异性结晶。因此，颗粒的热力学稳定性对于对纳米线生长过程的控制和理解来说是重要的。在本报告中，通过在纳米线生长期间通过在颗粒中累积铟来操纵其性质，特别是其表面张力和体积来探讨粒子稳定性。当超过金颗粒润湿的稳定性极限时，从顶部到一个纳米线侧面的液滴移位液体弄湿了液体侧面的液滴移位。该颗粒位移归因于降低的表面张力和顶面的截短。此外，我们的结果表明位移的可逆性，表明（111/0001）刻面最有利的是在常见生长条件下湿润的液滴。在实验确定InAs生长的稳定条件，并且可以容易地应用于其他III-V纳米线的理解。

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