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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Reactive solid phase epitaxy of layered aurivillius-type oxyfluorides Bi2TiO4F2 using polyvinylidene fluoride
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Reactive solid phase epitaxy of layered aurivillius-type oxyfluorides Bi2TiO4F2 using polyvinylidene fluoride

机译：层状Aurivillius型氧氟乙烯二氟醚的反应性固相外延，使用聚偏二氟乙烯

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摘要

Aurivillius-type oxyfluorides are promising ferroelectric and photocatalytic materials. However, their thin films have yet to be fabricated because of the difficulty of synthesis when using both conventional high-temperature gas-phase processes and low-temperature topotactic methods. Here, we present reactive solid phase epitaxy of a layered Aurivillius-type oxyfluoride Bi2TiO4F2 from room-temperature fabricated Bi2TiOx using polyvinylidene fluoride (PVDF) as a fluorine source. Bi2TiO4F2 epitaxial films are obtained by reacting a room-temperature fabricated precursor with PVDF at 330 degrees C under an Ar flow. However, crystallization does not proceed through PVDF treatment in air, indicating that a reduced atmosphere is crucial to removing oxide ions from the precursor and incorporating fluoride ions. The Bi2TiO4F2 film shows a peak at 240 K in the dielectric constant-versus-temperature curve, which originates from the tilting of Ti(O,F)(6) octahedra. This peak temperature is lower than that of the bulk (284 K), suggesting that the local structural distortion is suppressed because of the epitaxial strain from the substrate. Reactive solid phase epitaxy using PVDF as described in this paper should provide a new means of synthesizing transition-metal oxyfluorides in the epitaxial thin-film form.
机译：AURIVILLIUS型氧氟氟醚是有前途的铁电和光催化材料。然而，由于在使用常规的高温气相方法和低温拓扑方法时，它们的薄膜尚未制造。这里，我们使用聚偏二氟乙烯（PVDF）作为氟源，从室温制造的BI2TIOx中呈现层状Aurivillius型氧氟丝酰胺Bi2TiO4F2的反应性固相外延。通过在AR流动下在330℃下在330℃下使PVDF与PVDF反应来获得Bi2TiO4F2外延膜。然而，结晶不会通过空气中的PVDF处理，表明，降低的气氛对于从前体中除去氧化物离子并掺入氟离子是至关重要的。 Bi2TiO4F2膜在介电常数常数曲线中显示出240k的峰值，该曲线源自Ti（O，F）（6）八面叶的倾斜。该峰值温度低于体积（284k）的峰值温度，表明由于来自衬底的外延应变，抑制了局部结构变形。如本文所述，使用PVDF的反应性固相外延应提供一种在外延薄膜形式中合成过渡金属氧氧化物的新方法。

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