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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >New amidinate complexes of indium(III): promising CVD precursors for transparent and conductive In2O3 thin films
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New amidinate complexes of indium(III): promising CVD precursors for transparent and conductive In2O3 thin films

机译：铟（III）的新氨化络合物：有希望用于透明和导电的CVD前体IN2O3薄膜

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摘要

For the first time, synthesis of two new amidinate-ligand comprising heteroleptic indium complexes, namely [InCl(amd)(2)] (1) and [InMe(amd)(2)] (2), via salt-metathesis and their detailed characterization is reported. For comparison, the earlier reported homoleptic tris-amidinate [In(amd)(3)] (3) was also synthesized and analyzed in detail especially with respect to the thermal properties and molecular crystal structure analysis which are reported here for the first time. From nuclear magnetic resonance spectroscopy (NMR) and single-crystal X-ray diffraction (XRD), all three compounds were found to be monomeric with C2 (compound 1 and 2) and C3 symmetry (compound 3). Both halide-free compounds 2 and 3 were evaluated regarding their thermal properties using temperature-dependent H-1-NMR, thermogravimetric analysis (TGA) and iso-TGA, revealing suitable volatility and thermal stability for their application as potential precursors for chemical vapor phase thin film deposition methods. Indeed, metalorganic chemical vapor deposition (MOCVD) experiments over a broad temperature range (400 degrees C-700 degrees C) revealed the suitability of these two compounds to fabricate In2O3 thin films in the presence of oxygen on Si, thermally grown SiO2 and fused silica substrates. The as-deposited thin films were characterized in terms of their crystallinity via X-ray diffraction (XRD), morphology by scanning electron microscopy (SEM) and composition through complementary techniques such as Rutherford-backscattering spectrometry (RBS) in combination with nuclear reaction analysis (NRA) and X-ray photoelectron spectroscopy (XPS). From UV/Vis spectroscopy, the deposited In2O3 thin films on fused silica substrates were found to be highly transparent (T > 95% at 560 nm, compound 3). In addition, Hall measurements revealed high charge carrier densities of 1.8 x 10(20) cm(-3) (2) and 6.5 x 10(19) cm(-3) (3) with a Hall-mobility of 48 cm(2) V-1 s(-1) (2) and 74 cm(2) V-1 s(-1) (3) for the respective thin films, rendering the obtained thin films applicable as a transparent conducting oxide that could be suitable for optoelectronic applications.
机译：首次，合成两种新的脒基配体，包括异磷铟配合物，即[含（2）（2）]（1）和[INME（AMD）（2）]（2），通过盐复分解及其报告了详细表征。为了比较，较早报告的经络Tris-氨基胺[In（AMD）（3）]（3）也被详细合成和分析，特别是关于在此首次报告的热性质和分子晶体结构分析。从核磁共振光谱（NMR）和单晶X射线衍射（XRD），发现所有三种化合物都是用C 2（化合物1和2）和C3对称性的单体（化合物3）。使用温度依赖性H-1-NMR，热重分析（TGA）和ISO-TGA对其热性能进行评价无卤化合物2和3，揭示其应用作为化学气相的潜在前体的适当挥发性和热稳定性薄膜沉积方法。实际上，在宽温度范围内（400℃-700℃）的金属有机化学气相沉积（MOCVD）实验揭示了这两种化合物在Si，热生长的SiO 2和熔融二氧化硅的氧气存在下制造In2O3薄膜的适用性基板。通过X射线衍射（XRD），通过扫描电子显微镜（SEM）和组合物，通过诸如Rutherford-Back散射光谱（RBS）的核反应分析，通过扫描电子显微镜（SEM）和组合物来表征所述薄膜的特征。 （NRA）和X射线光电子体光谱（XPS）。从UV / Vis光谱学，发现稠合的二氧化硅底物上的沉积In2O3薄膜在560nm，化合物3下，化合物3）高度透明（T> 95％）。此外，霍尔测量显示高电荷载体密度为1.8×10（ - 3）（2）（2）和6.5×10（19）cm（-3）（3），霍尔迁移率为48厘米（2相应薄膜的V-1S（-1）（2）和74cm（2）V-1s（3），可作为适用的透明导电氧化物，使得到的薄膜呈现为透明的薄膜用于光电应用。

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