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Low resistivity Fe-Co-B-Ti-Nb amorphous thin film as a copper barrier

机译:低电阻率Fe-Co-B-Ti-Nb非晶薄膜作为铜屏障

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摘要

This study investigated the electrical resistivities and thermal stabilities of Cu/(Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2/Si structure and Cu/(Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2/Si alloy films. The films were prepared by magnetron sputtering using a Cu/(Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2/Si target and a Cu target. The as-deposited (Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2 film is amorphous, and the film remains its noncrystallinity up to a temperature of 500 °C. Diffusion barrier characteristics showed that the sandwiched Cu/(Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2/Si film, in which the (Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2 film was deposited under a substrate bias of -200 V, had a failure temperature of 575 °C. Barrierless Cu_(0.793)((Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2)_(0.207)/Si alloy film had the lowest resistivity of 2.7 μΩ cm when the film was annealed at 600 °C, and Cu_(0.699)(Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2)_(0.301)/Si alloy film had the highest failure temperature of at least 750 °C. The low resistive Cu/(Fe_(0.55)Co_(0.45))_(90)B_6Ti_2Nb_2) alloy film is promising to be used as a barrierless Cu interconnects.
机译:本研究研究了Cu /(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2 / SI结构和CU /(FE_(0.55)CO_(0.45))_(90)B_6TI_2NB_2 / SI的电阻率和热稳定性合金薄膜。使用Cu /(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2 / Si靶和Cu靶标制备膜通过磁控溅射制备。沉积的(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2薄膜是无定形的,并且膜仍然是其不折叠,高达500℃的温度。扩散阻挡特性显示夹层的Cu /(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2 / Si膜,其中(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2膜沉积在下面-200 V的衬底偏压,失效温度为575℃。禁止CU_(0.793)((FE_(0.55)CO_(0.45))_(90)B_6TI_2NB_2)_(0.207)/ Si合金膜在600℃下的膜退火时具有2.7μΩcm的最低电阻率,以及CU_ (0.699)(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2)_(0.301)/ Si合金膜的最高故障温度至少为750℃。低电阻Cu /(Fe_(0.55)CO_(0.45))_(90)B_6TI_2NB_2)合金膜是有前途的,用作障禁止Cu互连。

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