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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors
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Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors

机译：铝纳米圈堆叠MGNIO金属半导体 - 金属紫外线光电探测器

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摘要

Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5?nm for the as-deposited MgNiO films was improved to 23.4?nm and 24.8?nm for the MgNiO films annealed at 500?°C and 600?°C for 60?min, respectively. For the film-structured MSM-UVPDs with 500?°C-annealed MgNiO films operated at a bias voltage of 5?V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78?×?10?2A/W, 3.74?×?10?12A, 2.10?×?10?10?W, and 1.50?×?109cmHz0.5W?1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0?×?107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5?V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00?×?10?1A/W, 7.71?×?10?12A, 3.88?×?10?11?W, and 8.16?×?109cmHz0.5W?1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.
机译：因为MgO和NiO材料具有相同的岩盐立方结构和类似的晶格常数，所以通过合金MgO和NiO沉积金属半导体 - 金属紫外光探测器（MSM-UVPD）的Mgnio吸收层。为了改善Mgnio薄膜的性质，在各种温度下将薄膜进行退火。用于沉积的MgNiO膜的晶粒尺寸为18.5Ω·NM，用于在500Ω·℃和600℃下退火60Ω·薄膜的23.4μm和24.8·nm。对于具有500°C的薄膜结构MSM-UVPDS，具有500Ω·°C退火的MGNIO薄膜，在偏置电压为5Ωv，光反对票，平均噪声电流，噪声等效电源和特定探测中为1.78？×10？2a / W，3.74？×10？12a，2.10？×10？10？w，1.50？×109cmhz0.5w？1。铝（Al）纳米球堆叠在薄膜结构Mgnio MSM-UVPD上。通过增加Al纳米球的密度来改善所得al-an inaphy堆叠的MgniOmsm-UVPDS的性能。当Al纳米堆叠的MGNIO MSM-UVPD在5Ω·V的偏置电压下操作时，具有约2.0Ω·107 / mm2的Al纳米末期密度，光响应，平均噪声电流，噪声等效功率和特定检测率是2.00？×10？1a / w，7.71？×10？12a，3.88？×10？11？w，8.16？×109cmhz0.5w？1。尽管Al纳米球引起的噪声，但是Al-an纳米堆叠的MgniOmsm-UVPDs的性能优于膜结构MgniOmSm-UVPDs的性能。改善的侦探性能归因于表面等离子体共振引起的吸光度和堆叠的Al纳米球的光学散射效果的增加。

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