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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >The effect of oxygen pretreatment at hetero-interface on the photovoltaic properties of MoS2/Si heterojunction solar cells
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The effect of oxygen pretreatment at hetero-interface on the photovoltaic properties of MoS2/Si heterojunction solar cells

机译：氧预处理在异质界面对MOS2 / Si异质结太阳能电池光伏性能的影响

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摘要

In this work, we modify the n-type MoS2/(P)-type Si heterojunction interface by oxygen pretreatment at the initial stage of MoS2 films deposition. Such a facile pretreatment process has effective effect on the defects recombination reduction and band alignment at the MoS2/Si heterojunction interface. By adding the O-2 into the sputtering gases and lasting 3-10 s, the oxygen vacancy defects at the hetero-interface significantly decreased and the built-in electric field greatly increased and exceeded 600 mV, which was benefit for reducing defects recombination losses and improving carrier extraction at MoS2/Si interface. Hence, the enhanced MoS2/Si heterojunction solar cells performance (V-oc of 243 mV, FF of 58.71 and J(sc) of 32.35 mA/cm(2)) were obtained with the optimized conversion efficiency of 4.62%. While, if the pre-sputtering time was over 20 s, the interface vacancy defects increased instead and the built-in potential was reduced to 582.7 mV, which leads to the poor carrier transport at MoS2/Si interface and adversely affects the cells electrical performance. The results demonstrate that the appropriate oxygen pretreatment could be a new and efficient way to enhance the photovoltaic properties of the MoS2/Si heterojunction solar cells by the interface modification effect. (C) 2019 Elsevier B.V. All rights reserved.
机译：在这项工作中，通过MOS2膜沉积的初始阶段，通过氧预处理修改n型MOS2 /（P）型型SI异质结界面。这种容易预处理过程对MOS2 / Si异质结界面处的缺陷复合减少和带对准具有有效的影响。通过将O-2添加到溅射气体中并持续3-10秒，异质界面处的氧空位缺陷显着降低，内置电场大大增加并超过600 mV，这对于减少缺陷重组损失是有益的并改善MOS2 / SI接口的载流子提取。因此，获得增强的MOS2 / Si异质结太阳能电池（V-oc为243mV，58.71和j（sc）的32.35mA / cm（2））的优化转化效率为4.62％。虽然，如果预溅射时间超过20秒，则界面空位缺陷增加，内置电位降至582.7 mV，这导致MOS2 / Si界面处的较差的载波运输，并且对电池电气性能产生不利影响。结果表明，适当的氧气预处理可以是通过界面改性效应来增强MOS2 / Si异质结太阳能电池的光伏性能的新方法。 （c）2019 Elsevier B.v.保留所有权利。

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