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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Influence (Ce and Sm) co-doping ZnO nanorods on the structural, optical and electrical properties of the fabricated Schottky diode using chemical bath deposition
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Influence (Ce and Sm) co-doping ZnO nanorods on the structural, optical and electrical properties of the fabricated Schottky diode using chemical bath deposition

机译：影响（CE和SM）共掺杂ZnO纳米棒对制造的肖特基二极管的结构，光学和电性能使用化学浴沉积

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摘要

Schottky diodes based on ZnO nanorods, undoped and co-doped with different concentrations (0.0, 0.2, 0.4, 0.6 and 0.8 at.%) of Ce and Sm, were fabricated on glass and on n-Si (111) substrates using chemical bath deposition assisted with the sol-gel spin coating. The ZnO maintained its hexagonal shape up to higher levels of doping (0.8 at.%) with the growth rate being suppressed by Ce and Sm co-doping. The as-synthesized nanorods were found to be highly crystalline and no impurities or peaks related to Ce and Sm or their oxides were observed. Room temperature Raman spectroscopy revealed that the prominent E-2 high peak shifted towards a lower wave number and the intensity decreased upon doping. X-ray photoelectron spectroscopy studies at room temperature showed that the presence of Zn and O in all samples with small amounts of Ce and Sm being detected at doping levels of 0.8 at.%. Photoluminescence studies at room temperature revealed a weak ultraviolet emission and a strong deep level (visible) emission. Deconvolution of the visible emission spectra showed that more than one defect contributed to the visible emission. The I-V characteristics of the fabricated Schottky diode devices measured at room temperature showed that the Ce and Sm co-doping increased the generation-recombination process in the fabricated Schottky diodes. Furthermore, the current transport mechanism in the fabricated Schottky devices at a lower voltage (0.0-similar to 0.6 V) was dominated by ohmic conduction mechanism, while at voltages greater than 0.6 V, the space charge limited current and the trap filled limit voltage mechanism dominated. (C) 2019 Elsevier B. V. All rights reserved.
机译：基于ZnO纳米棒的肖特基二极管，未掺杂，并用不同浓度（0.0,0.2,0.4,0.6和0.8.％）的Ce和Sm，在玻璃和使用化学浴上（111）基底制造不同浓度（0.0,0.2,0.4,0.6和0.8.％）沉积辅助溶胶 - 凝胶旋涂。 ZnO将其六边形形状保持在较高水平的掺杂（0.8 at.％），通过CE和SM共掺杂抑制生长速率。发现如合成的纳米棒是高晶体的，并且没有观察到与Ce和Sm或氧化物相关的杂质或峰。室温拉曼光谱显示，突出的E-2高峰朝向较低的波浪数，并且掺杂时强度降低。室温X射线光电子能谱研究表明，在掺杂水平为0.8℃下检测少量Ce和Sm的所有样品中Zn和O的存在。％。室温下的光致发光研究显示薄弱的紫外线发射和强烈的深度（可见）排放。可见光光谱的去卷积表明，有缺陷的缺陷导致可见排放。在室温下测量的制造肖特基二极管器件的I-V特性表明CE和SM共掺杂在制造的肖特基二极管中增加了产生 - 重组过程。此外，在较低电压（0.0-类似于0.6V）的制造的肖特基器件中的电流传送机构由欧姆传导机构支配，而在大于0.6V的电压下，空间电荷有限电流和陷阱填充限位电压机构主导。 （c）2019 Elsevier B. V.保留所有权利。

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