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3Ti 3FeO 12]]>

机译:<![CDATA [电响应和改进的BICU 3 TI 3 FEO < CE:INF PLACE =“POST”> 12 ]]>

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AbstractBiCu3Ti3FeO12ceramics, with similar crystal structure as ACu3Ti4O12, were fabricated by a standard solid-state reaction method. By tuning the sintering temperature, the samples with homogeneous grain size and low porosity were obtained. The electric responses of BiCu3Ti3FeO12were revealed by electric modulus and complex impedance analysis. Interestingly, unlike CCTO materials, BiCu3Ti3FeO12ceramics did not exhibit low-frequency giant permittivity plateau, which is induced by high grain resistivity. Due to different electronegativity of Ti4+and Fe3+, Fe3+is much easier to be reduced to Fe2+and in turn BiCu3Ti3FeO12ceramics show a higher Fe2+content. Higher activation energy for electron hopping between Fe2+and Fe3+gives rise to a higher grain resistivity in the samples. By modifying composition, low-frequency giant permittivity plateau was successfully achieved for the samples with low Fe content.Highlights?High grain resistivity induces BiCu3Ti3FeO12don't show giant permittivity plateau.?Electron hopping between Fe2+and Fe3+contributes to conduction behavior of grain.?Giant permittivity plateau was achieved for the samples with low Fe content.]]>
机译:<![CDATA [ 抽象 bicu 3 ti 3 FEO 12 陶瓷,具有类似的晶体结构作为ACU 3 ti 4 o 12 ,由标准实体制造国家反应方法。通过调节烧结温度,获得具有均匀晶粒尺寸和低孔隙率的样品。 BICU 3 TI 3 FEO 12 通过电模量和复杂的阻抗分析揭示。有趣的是,与CCTO材料不同,BICU 3 TI 3 FEO 12> 12 陶瓷没有表现出低频巨型渗透平台,这是由高晶型电阻率引起的。由于Ti的电气负电阻 4 + 和Fe 3 + ,Fe 3 + 更容易减少到fe 2 + ,又转bicu 3 TI 3 FEO 12 陶瓷显示A.更高的FE 2 + 内容。 fe 2 + 和fe 3 + 产生的电子> sup>样品中较高的晶粒电阻率。通过改性组成,对具有低Fe含量的样品成功地实现了低频巨型渗透平台。 突出显示 高粒电阻率诱导BICU 3 TI 3 feo 12 不显示巨型介入高原。 Fe 2的电子跳跃+ 和fe 3 + 有助于传导行为粒子。 为具有低Fe含量的样本实现了巨大介电常数高原。 ]]>

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