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首页> 外文期刊>Journal of Materials Science >A revisit to atomic layer deposition of zinc oxide using diethylzinc and water as precursors
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A revisit to atomic layer deposition of zinc oxide using diethylzinc and water as precursors

机译：用二乙基锌和水作为前体的氧化锌的原子层沉积反向

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摘要

Nanophase zinc oxide (ZnO) has been widely studied as an important multifunctional material in many applications. Atomic layer deposition (ALD) is a unique thin-film synthesis technique, featuring its extreme uniformity, unrivaled conformal coverage, low deposition temperature, and precise controllability. Using diethylzinc (DEZ) and water as precursors, ALD has been reported previously for growing nanophase ZnO thin films. However, the growth characteristics and the resultant ZnO crystallinity have not been well characterized and understood. To this end, we revisited the ALD process of ZnO using DEZ and water. Through employing a suite of advanced characterization techniques, we systematically addressed the growth characteristics, morphological changes, and the crystallinity evolution of ZnO along with growth temperature in the range of 30-250 degrees C. The growth characteristics of the ALD ZnO films were investigated using in situ quartz crystal microbalance (QCM), scanning electron microscopy, atomic force microscopy, and synchrotron-based X-ray reflectivity. The crystallinity of the ALD ZnO films was determined using synchrotron-based X-ray diffraction and high-resolution transmission electron microscopy. In addition, through further analyzing QCM data, we proposed the adsorption-limited surface reaction for ALD ZnO growth with the temperature-dependent number of -OH surface group reacting with one DEZ molecule. Thus, this study contributes to offer new and deep insights on the fundamental ALD process of ZnO.
机译：纳比氧化锌（ZnO）已被广泛地研究了许多应用中的重要多功能材料。原子层沉积（ALD）是一种独特的薄膜合成技术，具有其极端均匀性，无与伦比的共形覆盖，低沉积温度和精确的可控性。使用二乙基锌（DEZ）和水作为前体，先前已经报道了ALD用于生长纳米ZnO薄膜。然而，没有很好地表征和理解的生长特性和所得ZnO结晶度。为此，我们使用DEZ和水重新审视了Zno的ALD过程。通过采用一套先进的表征技术，我们系统地解决了ZnO的生长特性，形态学变化以及ZnO的结晶性进化以及在30-250℃的范围内的生长温度。研究了ALD ZnO膜的生长特性原位石英晶体微稳定（QCM），扫描电子显微镜，原子力显微镜和基于同步的X射线反射率。使用基于同步辐射的X射线衍射和高分辨率透射电子显微镜测定ALD ZnO膜的结晶度。另外，通过进一步分析QCM数据，我们提出了对ALD ZnO生长的吸附限制性表面反应，与一个DEZ分子反应的-OH表面基质的温度依赖性数量。因此，这项研究有助于为Zno的基本ALD进程提供新的和深入了解。

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  • 来源
    《Journal of Materials Science》 |2019年第7期|共13页
  • 作者

    Cai Jiyu; Ma Zhiyuan; Wejinya Uche; Zou Min; Liu Yuzi; Zhou Hua; Meng Xiangbo;

  • 作者单位

    Univ Arkansas Dept Mech Engn Fayetteville AR 72701 USA;

    Argonne Natl Lab Adv Photon Source 9700 South Cass Ave Argonne IL 60439 USA;

    Univ Arkansas Dept Mech Engn Fayetteville AR 72701 USA;

    Univ Arkansas Dept Mech Engn Fayetteville AR 72701 USA;

    Argonne Natl Lab Ctr Nanoscale Mat 9700 South Cass Ave Argonne IL 60439 USA;

    Argonne Natl Lab Adv Photon Source 9700 South Cass Ave Argonne IL 60439 USA;

    Univ Arkansas Dept Mech Engn Fayetteville AR 72701 USA;

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  • 正文语种 eng
  • 中图分类 工程材料学;
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